抄録
We report thermoelectric performance in the temperature range of 300 K–800 K of SnSe thin films on r-, a-, and c-plane sapphire substrates grown by pulsed laser deposition. Several state of the art characterization techniques such as XRD, TEM, SEM, and XPS were used to thoroughly characterize the thin films. Thermal conductivity of these films were measured at room temperature using 3ω technique. Planar orientation of the substrate was found to influence the thermoelectric performance of SnSe thin films very significantly. SnSe thin films grown on r-plane substrate showed the lowest thermal conductivity of 0.35 W/m.K at 300 K; the highest power factor and ZT values of 1.96 μW/cm.K 2 and 0.45, respectively at 800 K. These results for SnSe thin films is a ground breaking and has a potential to lead to efficient thin films thermoelectric modules.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 347-353 |
| ページ数 | 7 |
| ジャーナル | Journal of Physics and Chemistry of Solids |
| 巻 | 129 |
| DOI | |
| 出版物ステータス | Published - 2019 6 1 |
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ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
これを引用
Influence of the planar orientation of the substrate on thermoelectric response of SnSe thin films. / Saini, Shrikant; Mele, Paolo; Tiwari, Ashutosh.
：: Journal of Physics and Chemistry of Solids, 巻 129, 01.06.2019, p. 347-353.研究成果: Article
}
TY - JOUR
T1 - Influence of the planar orientation of the substrate on thermoelectric response of SnSe thin films
AU - Saini, Shrikant
AU - Mele, Paolo
AU - Tiwari, Ashutosh
PY - 2019/6/1
Y1 - 2019/6/1
N2 - We report thermoelectric performance in the temperature range of 300 K–800 K of SnSe thin films on r-, a-, and c-plane sapphire substrates grown by pulsed laser deposition. Several state of the art characterization techniques such as XRD, TEM, SEM, and XPS were used to thoroughly characterize the thin films. Thermal conductivity of these films were measured at room temperature using 3ω technique. Planar orientation of the substrate was found to influence the thermoelectric performance of SnSe thin films very significantly. SnSe thin films grown on r-plane substrate showed the lowest thermal conductivity of 0.35 W/m.K at 300 K; the highest power factor and ZT values of 1.96 μW/cm.K 2 and 0.45, respectively at 800 K. These results for SnSe thin films is a ground breaking and has a potential to lead to efficient thin films thermoelectric modules.
AB - We report thermoelectric performance in the temperature range of 300 K–800 K of SnSe thin films on r-, a-, and c-plane sapphire substrates grown by pulsed laser deposition. Several state of the art characterization techniques such as XRD, TEM, SEM, and XPS were used to thoroughly characterize the thin films. Thermal conductivity of these films were measured at room temperature using 3ω technique. Planar orientation of the substrate was found to influence the thermoelectric performance of SnSe thin films very significantly. SnSe thin films grown on r-plane substrate showed the lowest thermal conductivity of 0.35 W/m.K at 300 K; the highest power factor and ZT values of 1.96 μW/cm.K 2 and 0.45, respectively at 800 K. These results for SnSe thin films is a ground breaking and has a potential to lead to efficient thin films thermoelectric modules.
KW - Figure of merit
KW - SnSe thin film
KW - Thermal conductivity
KW - Thermoelectricity
KW - Three-omega
UR - http://www.scopus.com/inward/record.url?scp=85061249332&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85061249332&partnerID=8YFLogxK
U2 - 10.1016/j.jpcs.2019.01.010
DO - 10.1016/j.jpcs.2019.01.010
M3 - Article
AN - SCOPUS:85061249332
VL - 129
SP - 347
EP - 353
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
SN - 0022-3697
ER -