Infrared absorption study of HfO2 and HfO2/Si interface ranging from 200cm-1 to 2000cm-1

Kazuyuki Tomida, Haruka Shimizu, Koji Kita, Kentaro Kyuno, Akira Toriumi

研究成果: Conference article

8 引用 (Scopus)

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In this paper, we report infrared absorption studies of HfO2, HfO2/Si interface and Hf(1-x)SixOy. Both HfO2 crystallization and SiO2 formation at the interface can be clearly detected in the absorption spectra in the far and middle infrared regions, respectively. By measuring the intensity change and the peak shift of infrared absorption spectra as functions of annealing temperature and time together with XRD patterns, we discuss a difference of the amorphous structure between HfO2 and SiO2, and also show an evolution of HfO2 crystallization in the monoclinic phase up to 1000°C. On the other hand, it is shown that the interfacial SiO2 layer is qualitatively similar to the thermally grown SiO2. Furthermore, it is demonstrated that a Si incorporation into HfO2 film significantly changes the IR absorption spectra, and that the Hf (1-x)SixOy film is phase-separated with an appearance of modified monoclinic phase by higher temperature annealing.

元の言語English
ページ(範囲)319-324
ページ数6
ジャーナルMaterials Research Society Symposium Proceedings
811
出版物ステータスPublished - 2004 12 1
イベントIntegration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions - San Francisco, CA, United States
継続期間: 2004 4 132004 4 16

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

フィンガープリント Infrared absorption study of HfO<sub>2</sub> and HfO<sub>2</sub>/Si interface ranging from 200cm<sup>-1</sup> to 2000cm<sup>-1</sup>' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

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