InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

T. Egawa, B. Zhang, N. Nishikawa, H. Ishikawa, T. Jimbo, M. Umeno

研究成果: Article査読

64 被引用数 (Scopus)

抄録

We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al0.27Ga0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 , an optical output power of 20 μW, and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27°C.

本文言語English
ページ(範囲)528-530
ページ数3
ジャーナルJournal of Applied Physics
91
1
DOI
出版ステータスPublished - 2002 1 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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