InGaN Multiple-Quantum-Well Light Emitting Diodes on Si(111) Substrates

B. J. Zhang, T. Egawa, H. Ishikawa, N. Nishikawa, T. Jimbo, M. Umeno

研究成果: Article査読

22 被引用数 (Scopus)

抄録

An intermediate layer consisting of AIN/AlGaN was used in the growth of InGaN multiple-quantum-well LEDs structure on Si(111) substrates. Crack-free films in 2 inch wafer and high-brightness LEDs were obtained. At 20 mA, the voltage te about 8.0 and 16.0 V for top and backside n-type electrodes, respectively. The EL peaks at ∼506 nm correspond to near band edge luminescence. The full width at half maximum of EL spectrum is 32 run at 20 mA current. The output power is 23.0 and 19.4 μW at 20 mA for top and backside n-type electrodes, respectively. To our knowledge, this value is the best result of nitride LEDs grown on Si substrate even though it is less than the one on sapphire and SiC substrates.

本文言語English
ページ(範囲)151-154
ページ数4
ジャーナルPhysica Status Solidi (A) Applied Research
188
1
DOI
出版ステータスPublished - 2001 11月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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