We have succeeded in growing plate shaped In0.3Ga 0.7As single crystals for substrate use by the traveling liquidus zone (TLZ) method. The TLZ method which we have invented for growing homogeneous mixed crystals requires diffusion-limited mass transport and convection in a melt should be avoided. In that point, large diameter crystals for substrates were difficult to be grown due to convection. Therefore, we attempted to grow plate shaped In0.3Ca0.7As crystals. Merits of plate crystals are suppression of convection in a melt during crystal growth by limiting the thickness of the plate and sufficient area for substrate use.
|出版ステータス||Published - 2005 12月 1|
|イベント||207th ECS Meeting - Quebec, Canada|
継続期間: 2005 5月 16 → 2005 5月 20
|Conference||207th ECS Meeting|
|Period||05/5/16 → 05/5/20|
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