In0.3Ga0.7As plate crystal growth for substrates by the TLZ method

K. Kinoshita, Y. Ogata, S. Adachi, M. Natsuisaka, T. Ishikawa, T. Masaki, S. Yoda

研究成果: Paper査読

抄録

We have succeeded in growing plate shaped In0.3Ga 0.7As single crystals for substrate use by the traveling liquidus zone (TLZ) method. The TLZ method which we have invented for growing homogeneous mixed crystals requires diffusion-limited mass transport and convection in a melt should be avoided. In that point, large diameter crystals for substrates were difficult to be grown due to convection. Therefore, we attempted to grow plate shaped In0.3Ca0.7As crystals. Merits of plate crystals are suppression of convection in a melt during crystal growth by limiting the thickness of the plate and sufficient area for substrate use.

本文言語English
ページ367-373
ページ数7
出版ステータスPublished - 2005 12 1
外部発表はい
イベント207th ECS Meeting - Quebec, Canada
継続期間: 2005 5 162005 5 20

Conference

Conference207th ECS Meeting
国/地域Canada
CityQuebec
Period05/5/1605/5/20

ASJC Scopus subject areas

  • 工学(全般)

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