Integrated wideband dipole antenna for pulse beam-formability by using 0.18-μm CMOS technology

Nguyen Ngoc Mai Khanh, Masahiro Saski, Kunihiro Asada

研究成果: Conference contribution

抜粋

A wideband on-chip dipole antenna for fully integrated pulse beam-forming purpose has been designed and fabricated. The antenna element in meandering shape is located in the top metal of a 1.8-V 5-metal-layer 0.18-μm CMOS chip. The antenna's bandwidth from S-parameter measurement is 4.4 GHz with operating frequency range from 7.4 GHz to 11.8 GHz. A CMOS integrated pulse generator with possibility of pulse delay adjustment is included to the antenna's terminals. The minimum delay resolution is 2.3 ps in post-layout simulation. The 1.1-mV peak-peak (p-p) received pulse voltage at 10-GHz resonant frequency is achieved by using a 20-dB standard horn antenna with 38-mm distance to the chip.

元の言語English
ホスト出版物のタイトル2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010
ページ1561-1564
ページ数4
出版物ステータスPublished - 2010 12 1
イベント2010 Asia-Pacific Microwave Conference, APMC 2010 - Yokohama, Japan
継続期間: 2010 12 72010 12 10

出版物シリーズ

名前Asia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2010 Asia-Pacific Microwave Conference, APMC 2010
Japan
Yokohama
期間10/12/710/12/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • これを引用

    Khanh, N. N. M., Saski, M., & Asada, K. (2010). Integrated wideband dipole antenna for pulse beam-formability by using 0.18-μm CMOS technology. : 2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010 (pp. 1561-1564). [5728182] (Asia-Pacific Microwave Conference Proceedings, APMC).