Integration of terraced laser diode and garnet crystals by wafer direct bonding

Hideki Yokoi, Takashi Waniishi, Tetsuya Mizumoto, Masafumi Shimizu, Kazumasa Sakurai, Naoki Futakuchi, Yoshiaki Nakano

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Integration of a semiconductor laser diode and an optical isolator was studied using the wafer direct bonding technique. A terraced laser diode was fabricated by reactive ion etching using CH4/H2/O2 gas. A smooth and vertical mirror facet was obtained by adjusting the flow rate of the etchant gas. Room-temperature pulsed laser operation was achieved in the laser diode with one cleaved facet and the second facet formed by reactive ion etching. The terraced laser diode was integrated with garnet crystals by wafer direct bonding. Room-temperature pulsed laser operation was confirmed after the bonding process.

本文言語English
ページ(範囲)3463-3467
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
40
5 A
DOI
出版ステータスPublished - 2001 5
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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