Integration of terraced laser diode and garnet crystals by wafer direct bonding

Hideki Yokoi; Takashi Waniishi; Tetsuya Mizumoto; Masafumi Shimizu; Kazumasa Sakurai; Naoki Futakuchi; Yoshiaki Nakano

doi:10.1143/jjap.40.3463

Integration of terraced laser diode and garnet crystals by wafer direct bonding

Hideki Yokoi, Takashi Waniishi, Tetsuya Mizumoto, Masafumi Shimizu, Kazumasa Sakurai, Naoki Futakuchi, Yoshiaki Nakano

研究成果: Article › 査読

2 被引用数 (Scopus)

抄録

Integration of a semiconductor laser diode and an optical isolator was studied using the wafer direct bonding technique. A terraced laser diode was fabricated by reactive ion etching using CH₄/H₂/O₂ gas. A smooth and vertical mirror facet was obtained by adjusting the flow rate of the etchant gas. Room-temperature pulsed laser operation was achieved in the laser diode with one cleaved facet and the second facet formed by reactive ion etching. The terraced laser diode was integrated with garnet crystals by wafer direct bonding. Room-temperature pulsed laser operation was confirmed after the bonding process.

本文言語	English
ページ（範囲）	3463-3467
ページ数	5
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	40
号	5 A
DOI	https://doi.org/10.1143/jjap.40.3463
出版ステータス	Published - 2001 5
外部発表	はい

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

文献へのアクセス

10.1143/jjap.40.3463

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引用スタイル

Integration of terraced laser diode and garnet crystals by wafer direct bonding. / Yokoi, Hideki; Waniishi, Takashi; Mizumoto, Tetsuya; Shimizu, Masafumi; Sakurai, Kazumasa; Futakuchi, Naoki; Nakano, Yoshiaki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 5 A, 05.2001, p. 3463-3467.

研究成果: Article › 査読

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abstract = "Integration of a semiconductor laser diode and an optical isolator was studied using the wafer direct bonding technique. A terraced laser diode was fabricated by reactive ion etching using CH4/H2/O2 gas. A smooth and vertical mirror facet was obtained by adjusting the flow rate of the etchant gas. Room-temperature pulsed laser operation was achieved in the laser diode with one cleaved facet and the second facet formed by reactive ion etching. The terraced laser diode was integrated with garnet crystals by wafer direct bonding. Room-temperature pulsed laser operation was confirmed after the bonding process.",

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AU - Mizumoto, Tetsuya

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AU - Sakurai, Kazumasa

AU - Futakuchi, Naoki

AU - Nakano, Yoshiaki

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