抜粋
Integration of a semiconductor laser diode and an optical isolator was studied using the wafer direct bonding technique. A terraced laser diode was fabricated by reactive ion etching using CH4/H2/O2 gas. A smooth and vertical mirror facet was obtained by adjusting the flow rate of the etchant gas. Room-temperature pulsed laser operation was achieved in the laser diode with one cleaved facet and the second facet formed by reactive ion etching. The terraced laser diode was integrated with garnet crystals by wafer direct bonding. Room-temperature pulsed laser operation was confirmed after the bonding process.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 3463-3467 |
| ページ数 | 5 |
| ジャーナル | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| 巻 | 40 |
| 発行部数 | 5 A |
| 出版物ステータス | Published - 2001 5 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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これを引用
Yokoi, H., Waniishi, T., Mizumoto, T., Shimizu, M., Sakurai, K., Futakuchi, N., & Nakano, Y. (2001). Integration of terraced laser diode and garnet crystals by wafer direct bonding. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 40(5 A), 3463-3467.