Interface Oxidation Mechanism in HfO2/Silicon System with Post-Deposition Annealing

H. Shimizu, M. Sasagawa, K. Kita, K. Kyuno, A. Toriumi

研究成果 › 査読

本文言語	English
ページ（範囲）	486-487
ジャーナル	Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM)
出版ステータス	Published - 2003 9月 1

引用スタイル

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title = "Interface Oxidation Mechanism in HfO2/Silicon System with Post-Deposition Annealing",

author = "H. Shimizu and M. Sasagawa and K. Kita and K. Kyuno and A. Toriumi",

year = "2003",

month = sep,

day = "1",

language = "English",

pages = "486--487",

journal = "Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM)",

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T1 - Interface Oxidation Mechanism in HfO2/Silicon System with Post-Deposition Annealing

AU - Shimizu, H.

AU - Sasagawa, M.

AU - Kita, K.

AU - Kyuno, K.

AU - Toriumi, A.

PY - 2003/9/1

Y1 - 2003/9/1

M3 - Article

SP - 486

EP - 487

JO - Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM)

JF - Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM)

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