The formation process of a dislocation cluster outside the oxidation-induced stacking fault (OSF) -ring region during Czochralski (CZ) silicon crystal growth was investigated using a quenching and in situ annealing technique. Dislocation clusters were determined to be interstitial type from inside-outside contrast analysis of the transmission electron microscope (TEM) image. From the quenching experiment, the clustering temperature of dislocations which were formed by supersaturated self-interstitials and/or small dislocation loops was found to be about 1000 °C during growth. Furthermore, the characteristic axitial distribution of dislocation size was observed in the halted crystal. This could be explained by the change in concentration of supersaturated self-interstitials and the clustering of dislocations due to the enhancement of diffusion of point defects.
|ジャーナル||Journal of Crystal Growth|
|出版ステータス||Published - 2000 3 1|
|イベント||8th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors - Narita, Jpn|
継続期間: 1999 9 15 → 1999 9 18
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