Investigation on grown-in defects in CZ-Si crystal under slow pulling rate

Jun Furukawa, Hideo Tanaka, Yuji Nakada, Naoki Ono, Hiroyuki Shiraki

研究成果: Conference article査読

15 被引用数 (Scopus)

抄録

The formation process of a dislocation cluster outside the oxidation-induced stacking fault (OSF) -ring region during Czochralski (CZ) silicon crystal growth was investigated using a quenching and in situ annealing technique. Dislocation clusters were determined to be interstitial type from inside-outside contrast analysis of the transmission electron microscope (TEM) image. From the quenching experiment, the clustering temperature of dislocations which were formed by supersaturated self-interstitials and/or small dislocation loops was found to be about 1000 °C during growth. Furthermore, the characteristic axitial distribution of dislocation size was observed in the halted crystal. This could be explained by the change in concentration of supersaturated self-interstitials and the clustering of dislocations due to the enhancement of diffusion of point defects.

本文言語English
ページ(範囲)26-30
ページ数5
ジャーナルJournal of Crystal Growth
210
1
DOI
出版ステータスPublished - 2000 3 1
外部発表はい
イベント8th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors - Narita, Jpn
継続期間: 1999 9 151999 9 18

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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