Investigation on grown-in defects in CZ-Si crystal under slow pulling rate

Engineering & Materials Science

• Quenching 89%
• Crystals 85%
• Dislocations (crystals) 68%
• Point defects 66%
• Stacking faults 61%
• Crystal growth 60%
• Defects 59%
• Annealing 42%
• Electron microscopes 40%
• Oxidation 38%
• Silicon 34%
• Temperature 17%
• Experiments 15%

Chemical Compounds

• Dislocation Loop 79%
• Stacking Fault 58%
• Molecular Cluster 56%
• Crystal Point Defect 55%
• Interstitial 45%
• Crystal Growth 42%
• Annealing 34%
• Diffusion 26%
• Electron Particle 23%

Physics & Astronomy

• pulling 100%
• defects 48%
• crystals 41%
• interstitials 37%
• quenching 23%
• crystal defects 14%
• point defects 13%
• crystal growth 13%
• electron microscopes 11%
• oxidation 10%
• rings 9%
• augmentation 8%
• annealing 8%
• silicon 7%
• temperature 4%