TY - JOUR
T1 - Investigation on SnS film by RF sputtering for photovoltaic application
AU - Guang-Pu, Wei
AU - Zhi-Lin, Zhang
AU - Wei-Ming, Zhao
AU - Xiang-Hong, Gao
AU - Wei-Qun, Chen
AU - Tanamura, Hiromasa
AU - Yamaguchi, Masaki
AU - Noguchi, Hidenori
AU - Nagatomo, Takao
AU - Omoto, Osamu
PY - 1994/12/1
Y1 - 1994/12/1
N2 - Tin sulfide (SnS) films were prepared by RF sputtering method. The component, crystal structure, optical properties and electrical properties of SnS films were measured. The relationship between the SnS films properties and the sputtering condition was discussed. Using Sb as a dopant and combining thermal annealing at elevated temperatures (about 400°C), the n-type SnS films were obtained.
AB - Tin sulfide (SnS) films were prepared by RF sputtering method. The component, crystal structure, optical properties and electrical properties of SnS films were measured. The relationship between the SnS films properties and the sputtering condition was discussed. Using Sb as a dopant and combining thermal annealing at elevated temperatures (about 400°C), the n-type SnS films were obtained.
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M3 - Conference article
AN - SCOPUS:0028717252
SN - 0160-8371
VL - 1
SP - 365
EP - 368
JO - Conference Record of the IEEE Photovoltaic Specialists Conference
JF - Conference Record of the IEEE Photovoltaic Specialists Conference
T2 - Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2)
Y2 - 5 December 1994 through 9 December 1994
ER -