K-band Si MMIC amplifier and mixer using three-dimensional Masterslice MMIC technology

K. Nishikawa; I. Toyoda; K. Kamogawa; T. Tokumitsu; C. Yamaguchi; M. Hirano

K-band Si MMIC amplifier and mixer using three-dimensional Masterslice MMIC technology

K. Nishikawa, I. Toyoda, K. Kamogawa, T. Tokumitsu, C. Yamaguchi, M. Hirano

研究成果: Conference article › 査読

抄録

The Si monolithic microwave integrated circuits (MMIC) with high-performance Si devices or on-chip inductors are limited to the X-band operation due to low resistivity of the silicon substrate with resulting high transmission loss. This K-band Si MMICs uses 3D Masterslice MMIC technology that provides a separation between passive circuits and the low-resistivity Si substrate that results in low-loss transmission lines with loss competitive with that of coplanar waveguides formed on a GaAs substrate. The Masterslice Si MMIC that is the same as those demonstrated using the GaAs substrate reduces turn-around-time (TAT) and fabrication cost.

本文言語	English
ページ（範囲）	252-253, 445
ジャーナル	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
出版ステータス	Published - 1998 1月 1
イベント	Proceedings of the 1998 IEEE 45th International Solid-State Circuits Conference, ISSCC - San Francisco, CA, USA 継続期間: 1998 2月 5 → 1998 2月 7

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

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title = "K-band Si MMIC amplifier and mixer using three-dimensional Masterslice MMIC technology",

abstract = "The Si monolithic microwave integrated circuits (MMIC) with high-performance Si devices or on-chip inductors are limited to the X-band operation due to low resistivity of the silicon substrate with resulting high transmission loss. This K-band Si MMICs uses 3D Masterslice MMIC technology that provides a separation between passive circuits and the low-resistivity Si substrate that results in low-loss transmission lines with loss competitive with that of coplanar waveguides formed on a GaAs substrate. The Masterslice Si MMIC that is the same as those demonstrated using the GaAs substrate reduces turn-around-time (TAT) and fabrication cost.",

author = "K. Nishikawa and I. Toyoda and K. Kamogawa and T. Tokumitsu and C. Yamaguchi and M. Hirano",

year = "1998",

month = jan,

day = "1",

language = "English",

pages = "252--253, 445",

journal = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

issn = "0193-6530",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 IEEE 45th International Solid-State Circuits Conference, ISSCC ; Conference date: 05-02-1998 Through 07-02-1998",

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TY - JOUR

T1 - K-band Si MMIC amplifier and mixer using three-dimensional Masterslice MMIC technology

AU - Nishikawa, K.

AU - Toyoda, I.

AU - Kamogawa, K.

AU - Tokumitsu, T.

AU - Yamaguchi, C.

AU - Hirano, M.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - The Si monolithic microwave integrated circuits (MMIC) with high-performance Si devices or on-chip inductors are limited to the X-band operation due to low resistivity of the silicon substrate with resulting high transmission loss. This K-band Si MMICs uses 3D Masterslice MMIC technology that provides a separation between passive circuits and the low-resistivity Si substrate that results in low-loss transmission lines with loss competitive with that of coplanar waveguides formed on a GaAs substrate. The Masterslice Si MMIC that is the same as those demonstrated using the GaAs substrate reduces turn-around-time (TAT) and fabrication cost.

AB - The Si monolithic microwave integrated circuits (MMIC) with high-performance Si devices or on-chip inductors are limited to the X-band operation due to low resistivity of the silicon substrate with resulting high transmission loss. This K-band Si MMICs uses 3D Masterslice MMIC technology that provides a separation between passive circuits and the low-resistivity Si substrate that results in low-loss transmission lines with loss competitive with that of coplanar waveguides formed on a GaAs substrate. The Masterslice Si MMIC that is the same as those demonstrated using the GaAs substrate reduces turn-around-time (TAT) and fabrication cost.

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M3 - Conference article

AN - SCOPUS:0031683736

SN - 0193-6530

SP - 252-253, 445

JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

JF - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

T2 - Proceedings of the 1998 IEEE 45th International Solid-State Circuits Conference, ISSCC

Y2 - 5 February 1998 through 7 February 1998

ER -

K-band Si MMIC amplifier and mixer using three-dimensional Masterslice MMIC technology

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