The Si monolithic microwave integrated circuits (MMIC) with high-performance Si devices or on-chip inductors are limited to the X-band operation due to low resistivity of the silicon substrate with resulting high transmission loss. This K-band Si MMICs uses 3D Masterslice MMIC technology that provides a separation between passive circuits and the low-resistivity Si substrate that results in low-loss transmission lines with loss competitive with that of coplanar waveguides formed on a GaAs substrate. The Masterslice Si MMIC that is the same as those demonstrated using the GaAs substrate reduces turn-around-time (TAT) and fabrication cost.
|ジャーナル||Digest of Technical Papers - IEEE International Solid-State Circuits Conference|
|出版ステータス||Published - 1998 1月 1|
|イベント||Proceedings of the 1998 IEEE 45th International Solid-State Circuits Conference, ISSCC - San Francisco, CA, USA|
継続期間: 1998 2月 5 → 1998 2月 7
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