K-band Si MMIC amplifier and mixer using three-dimensional Masterslice MMIC technology

K. Nishikawa, I. Toyoda, K. Kamogawa, T. Tokumitsu, C. Yamaguchi, M. Hirano

    研究成果: Conference article査読

    2 被引用数 (Scopus)

    抄録

    The Si monolithic microwave integrated circuits (MMIC) with high-performance Si devices or on-chip inductors are limited to the X-band operation due to low resistivity of the silicon substrate with resulting high transmission loss. This K-band Si MMICs uses 3D Masterslice MMIC technology that provides a separation between passive circuits and the low-resistivity Si substrate that results in low-loss transmission lines with loss competitive with that of coplanar waveguides formed on a GaAs substrate. The Masterslice Si MMIC that is the same as those demonstrated using the GaAs substrate reduces turn-around-time (TAT) and fabrication cost.

    本文言語English
    ページ(範囲)252-253, 445
    ジャーナルDigest of Technical Papers - IEEE International Solid-State Circuits Conference
    出版ステータスPublished - 1998 1 1
    イベントProceedings of the 1998 IEEE 45th International Solid-State Circuits Conference, ISSCC - San Francisco, CA, USA
    継続期間: 1998 2 51998 2 7

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 電子工学および電気工学

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