Kinetic Model of Si Oxidation at HfO2/Si Interface with Post Deposition Annealing

H.Shimizu H.Shimizu, K.Kita K.Kita, K.Kyuno K.Kyuno, A.Toriumi A.Toriumi, Kentaro Kyuno

研究成果: Article › 査読

本文言語	English
ジャーナル	Japanese Journal of Applied Physics
巻	44
出版ステータス	Published - 2005 4 1

引用スタイル

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title = "Kinetic Model of Si Oxidation at HfO2/Si Interface with Post Deposition Annealing",

author = "H.Shimizu H.Shimizu and K.Kita K.Kita and K.Kyuno K.Kyuno and A.Toriumi A.Toriumi and Kentaro Kyuno",

year = "2005",

month = apr,

day = "1",

language = "English",

volume = "44",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

}

TY - JOUR

T1 - Kinetic Model of Si Oxidation at HfO2/Si Interface with Post Deposition Annealing

AU - H.Shimizu, H.Shimizu

AU - K.Kita, K.Kita

AU - K.Kyuno, K.Kyuno

AU - A.Toriumi, A.Toriumi

AU - Kyuno, Kentaro

PY - 2005/4/1

Y1 - 2005/4/1

M3 - Article

VL - 44

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

ER -