Kinetics and mechanism of formation of GaN from β-Ga2O 3 by NH3

Toshiki Sakai, Hajime Kiyono, Shiro Shimada

研究成果: Conference contribution

抄録

Nitridation of β-Ga2O3 to GaN in an atmosphere of NH3/Ar was investigated from the view points of kinetic results by thermogravimetric analysis (TGA) and microstructural observation. TGA and X-ray powder diffraction results showed that the nitridation of Ga2O 3 to GaN starts at about 650°C and decomposition of GaN formed occurs from 870°C. Isothermal TGA results showed that the nitridation proceeds linearly with time at 800 - 1000°C. Microstructural observation of the samples nitrided at 800°C showed that fine GaN particles (≃50 nm size) deposit on surfaces of Ga2O3 particles at an early stage, and the deposits grow with progress of the nitridation.

本文言語English
ホスト出版物のタイトルIII-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions
ページ235-240
ページ数6
出版ステータスPublished - 2010 7 7
外部発表はい
イベント2009 MRS Fall Meeting - Boston, MA, United States
継続期間: 2009 11 302009 12 4

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1202
ISSN(印刷版)0272-9172

Conference

Conference2009 MRS Fall Meeting
国/地域United States
CityBoston, MA
Period09/11/3009/12/4

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

フィンガープリント

「Kinetics and mechanism of formation of GaN from β-Ga<sub>2</sub>O <sub>3</sub> by NH<sub>3</sub>」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル