Kinetics and mechanism of formation of GaN from β-Ga2O 3 by NH3

Toshiki Sakai; Hajime Kiyono; Shiro Shimada

Kinetics and mechanism of formation of GaN from β-Ga₂O ₃ by NH₃

Toshiki Sakai, Hajime Kiyono, Shiro Shimada

研究成果: Conference contribution

抄録

Nitridation of β-Ga₂O₃ to GaN in an atmosphere of NH₃/Ar was investigated from the view points of kinetic results by thermogravimetric analysis (TGA) and microstructural observation. TGA and X-ray powder diffraction results showed that the nitridation of Ga₂O ₃ to GaN starts at about 650°C and decomposition of GaN formed occurs from 870°C. Isothermal TGA results showed that the nitridation proceeds linearly with time at 800 - 1000°C. Microstructural observation of the samples nitrided at 800°C showed that fine GaN particles (≃50 nm size) deposit on surfaces of Ga₂O₃ particles at an early stage, and the deposits grow with progress of the nitridation.

本文言語	English
ホスト出版物のタイトル	III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions
ページ	235-240
ページ数	6
出版ステータス	Published - 2010 7 7
外部発表	はい
イベント	2009 MRS Fall Meeting - Boston, MA, United States 継続期間: 2009 11 30 → 2009 12 4

出版物シリーズ

名前	Materials Research Society Symposium Proceedings
巻	1202
ISSN（印刷版）	0272-9172

Conference

Conference	2009 MRS Fall Meeting
Country	United States
City	Boston, MA
Period	09/11/30 → 09/12/4

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

フィンガープリント「Kinetics and mechanism of formation of GaN from β-Ga2O 3 by NH3」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

@inproceedings{c67ce7341e45432e96faf55903fc5fc3,

title = "Kinetics and mechanism of formation of GaN from β-Ga2O 3 by NH3",

abstract = "Nitridation of β-Ga2O3 to GaN in an atmosphere of NH3/Ar was investigated from the view points of kinetic results by thermogravimetric analysis (TGA) and microstructural observation. TGA and X-ray powder diffraction results showed that the nitridation of Ga2O 3 to GaN starts at about 650°C and decomposition of GaN formed occurs from 870°C. Isothermal TGA results showed that the nitridation proceeds linearly with time at 800 - 1000°C. Microstructural observation of the samples nitrided at 800°C showed that fine GaN particles (≃50 nm size) deposit on surfaces of Ga2O3 particles at an early stage, and the deposits grow with progress of the nitridation.",

author = "Toshiki Sakai and Hajime Kiyono and Shiro Shimada",

year = "2010",

month = jul,

day = "7",

language = "English",

isbn = "9781605111759",

series = "Materials Research Society Symposium Proceedings",

pages = "235--240",

booktitle = "III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions",

note = "2009 MRS Fall Meeting ; Conference date: 30-11-2009 Through 04-12-2009",

}

TY - GEN

T1 - Kinetics and mechanism of formation of GaN from β-Ga2O 3 by NH3

AU - Sakai, Toshiki

AU - Kiyono, Hajime

AU - Shimada, Shiro

PY - 2010/7/7

Y1 - 2010/7/7

N2 - Nitridation of β-Ga2O3 to GaN in an atmosphere of NH3/Ar was investigated from the view points of kinetic results by thermogravimetric analysis (TGA) and microstructural observation. TGA and X-ray powder diffraction results showed that the nitridation of Ga2O 3 to GaN starts at about 650°C and decomposition of GaN formed occurs from 870°C. Isothermal TGA results showed that the nitridation proceeds linearly with time at 800 - 1000°C. Microstructural observation of the samples nitrided at 800°C showed that fine GaN particles (≃50 nm size) deposit on surfaces of Ga2O3 particles at an early stage, and the deposits grow with progress of the nitridation.

AB - Nitridation of β-Ga2O3 to GaN in an atmosphere of NH3/Ar was investigated from the view points of kinetic results by thermogravimetric analysis (TGA) and microstructural observation. TGA and X-ray powder diffraction results showed that the nitridation of Ga2O 3 to GaN starts at about 650°C and decomposition of GaN formed occurs from 870°C. Isothermal TGA results showed that the nitridation proceeds linearly with time at 800 - 1000°C. Microstructural observation of the samples nitrided at 800°C showed that fine GaN particles (≃50 nm size) deposit on surfaces of Ga2O3 particles at an early stage, and the deposits grow with progress of the nitridation.

UR - http://www.scopus.com/inward/record.url?scp=77954198865&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954198865&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:77954198865

SN - 9781605111759

T3 - Materials Research Society Symposium Proceedings

SP - 235

EP - 240

BT - III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions

T2 - 2009 MRS Fall Meeting

Y2 - 30 November 2009 through 4 December 2009

ER -