Kinetics and mechanism of formation of GaN from β-Ga2O 3 by NH3

Toshiki Sakai; Hajime Kiyono; Shiro Shimada

Kinetics and mechanism of formation of GaN from β-Ga₂O ₃ by NH₃

Toshiki Sakai, Hajime Kiyono, Shiro Shimada

研究成果: Conference contribution

抄録

Nitridation of β-Ga₂O₃ to GaN in an atmosphere of NH₃/Ar was investigated from the view points of kinetic results by thermogravimetric analysis (TGA) and microstructural observation. TGA and X-ray powder diffraction results showed that the nitridation of Ga₂O ₃ to GaN starts at about 650°C and decomposition of GaN formed occurs from 870°C. Isothermal TGA results showed that the nitridation proceeds linearly with time at 800 - 1000°C. Microstructural observation of the samples nitrided at 800°C showed that fine GaN particles (≃50 nm size) deposit on surfaces of Ga₂O₃ particles at an early stage, and the deposits grow with progress of the nitridation.

本文言語	English
ホスト出版物のタイトル	III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions
ページ	235-240
ページ数	6
出版ステータス	Published - 2010 7 7
外部発表	はい
イベント	2009 MRS Fall Meeting - Boston, MA, United States 継続期間: 2009 11 30 → 2009 12 4

出版物シリーズ

名前	Materials Research Society Symposium Proceedings
巻	1202
ISSN（印刷版）	0272-9172

Conference

Conference	2009 MRS Fall Meeting
国/地域	United States
City	Boston, MA
Period	09/11/30 → 09/12/4

ASJC Scopus subject areas

材料科学（全般）
凝縮系物理学
材料力学
機械工学

他のファイルとリンク

引用スタイル

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abstract = "Nitridation of β-Ga2O3 to GaN in an atmosphere of NH3/Ar was investigated from the view points of kinetic results by thermogravimetric analysis (TGA) and microstructural observation. TGA and X-ray powder diffraction results showed that the nitridation of Ga2O 3 to GaN starts at about 650°C and decomposition of GaN formed occurs from 870°C. Isothermal TGA results showed that the nitridation proceeds linearly with time at 800 - 1000°C. Microstructural observation of the samples nitrided at 800°C showed that fine GaN particles (≃50 nm size) deposit on surfaces of Ga2O3 particles at an early stage, and the deposits grow with progress of the nitridation.",

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T1 - Kinetics and mechanism of formation of GaN from β-Ga2O 3 by NH3

AU - Sakai, Toshiki

AU - Kiyono, Hajime

AU - Shimada, Shiro

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N2 - Nitridation of β-Ga2O3 to GaN in an atmosphere of NH3/Ar was investigated from the view points of kinetic results by thermogravimetric analysis (TGA) and microstructural observation. TGA and X-ray powder diffraction results showed that the nitridation of Ga2O 3 to GaN starts at about 650°C and decomposition of GaN formed occurs from 870°C. Isothermal TGA results showed that the nitridation proceeds linearly with time at 800 - 1000°C. Microstructural observation of the samples nitrided at 800°C showed that fine GaN particles (≃50 nm size) deposit on surfaces of Ga2O3 particles at an early stage, and the deposits grow with progress of the nitridation.

AB - Nitridation of β-Ga2O3 to GaN in an atmosphere of NH3/Ar was investigated from the view points of kinetic results by thermogravimetric analysis (TGA) and microstructural observation. TGA and X-ray powder diffraction results showed that the nitridation of Ga2O 3 to GaN starts at about 650°C and decomposition of GaN formed occurs from 870°C. Isothermal TGA results showed that the nitridation proceeds linearly with time at 800 - 1000°C. Microstructural observation of the samples nitrided at 800°C showed that fine GaN particles (≃50 nm size) deposit on surfaces of Ga2O3 particles at an early stage, and the deposits grow with progress of the nitridation.

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