TY - GEN
T1 - Kinetics and mechanism of formation of GaN from β-Ga2O 3 by NH3
AU - Sakai, Toshiki
AU - Kiyono, Hajime
AU - Shimada, Shiro
PY - 2010/7/7
Y1 - 2010/7/7
N2 - Nitridation of β-Ga2O3 to GaN in an atmosphere of NH3/Ar was investigated from the view points of kinetic results by thermogravimetric analysis (TGA) and microstructural observation. TGA and X-ray powder diffraction results showed that the nitridation of Ga2O 3 to GaN starts at about 650°C and decomposition of GaN formed occurs from 870°C. Isothermal TGA results showed that the nitridation proceeds linearly with time at 800 - 1000°C. Microstructural observation of the samples nitrided at 800°C showed that fine GaN particles (≃50 nm size) deposit on surfaces of Ga2O3 particles at an early stage, and the deposits grow with progress of the nitridation.
AB - Nitridation of β-Ga2O3 to GaN in an atmosphere of NH3/Ar was investigated from the view points of kinetic results by thermogravimetric analysis (TGA) and microstructural observation. TGA and X-ray powder diffraction results showed that the nitridation of Ga2O 3 to GaN starts at about 650°C and decomposition of GaN formed occurs from 870°C. Isothermal TGA results showed that the nitridation proceeds linearly with time at 800 - 1000°C. Microstructural observation of the samples nitrided at 800°C showed that fine GaN particles (≃50 nm size) deposit on surfaces of Ga2O3 particles at an early stage, and the deposits grow with progress of the nitridation.
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M3 - Conference contribution
AN - SCOPUS:77954198865
SN - 9781605111759
T3 - Materials Research Society Symposium Proceedings
SP - 235
EP - 240
BT - III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions
T2 - 2009 MRS Fall Meeting
Y2 - 30 November 2009 through 4 December 2009
ER -