Kinetics and mechanism of formation of GaN from β-Ga2O 3 by NH3

Toshiki Sakai, Hajime Kiyono, Shiro Shimada

研究成果: Conference contribution

抜粋

Nitridation of β-Ga2O3 to GaN in an atmosphere of NH3/Ar was investigated from the view points of kinetic results by thermogravimetric analysis (TGA) and microstructural observation. TGA and X-ray powder diffraction results showed that the nitridation of Ga2O 3 to GaN starts at about 650°C and decomposition of GaN formed occurs from 870°C. Isothermal TGA results showed that the nitridation proceeds linearly with time at 800 - 1000°C. Microstructural observation of the samples nitrided at 800°C showed that fine GaN particles (≃50 nm size) deposit on surfaces of Ga2O3 particles at an early stage, and the deposits grow with progress of the nitridation.

元の言語English
ホスト出版物のタイトルIII-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions
ページ235-240
ページ数6
出版物ステータスPublished - 2010 7 7
イベント2009 MRS Fall Meeting - Boston, MA, United States
継続期間: 2009 11 302009 12 4

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1202
ISSN(印刷物)0272-9172

Conference

Conference2009 MRS Fall Meeting
United States
Boston, MA
期間09/11/3009/12/4

    フィンガープリント

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Sakai, T., Kiyono, H., & Shimada, S. (2010). Kinetics and mechanism of formation of GaN from β-Ga2O 3 by NH3. : III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions (pp. 235-240). (Materials Research Society Symposium Proceedings; 巻数 1202).