抜粋
Nitridation of β-Ga2O3 to GaN in an atmosphere of NH3/Ar was investigated from the view points of kinetic results by thermogravimetric analysis (TGA) and microstructural observation. TGA and X-ray powder diffraction results showed that the nitridation of Ga2O 3 to GaN starts at about 650°C and decomposition of GaN formed occurs from 870°C. Isothermal TGA results showed that the nitridation proceeds linearly with time at 800 - 1000°C. Microstructural observation of the samples nitrided at 800°C showed that fine GaN particles (≃50 nm size) deposit on surfaces of Ga2O3 particles at an early stage, and the deposits grow with progress of the nitridation.
| 元の言語 | English |
|---|---|
| ホスト出版物のタイトル | III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions |
| ページ | 235-240 |
| ページ数 | 6 |
| 出版物ステータス | Published - 2010 7 7 |
| イベント | 2009 MRS Fall Meeting - Boston, MA, United States 継続期間: 2009 11 30 → 2009 12 4 |
出版物シリーズ
| 名前 | Materials Research Society Symposium Proceedings |
|---|---|
| 巻 | 1202 |
| ISSN（印刷物） | 0272-9172 |
Conference
| Conference | 2009 MRS Fall Meeting |
|---|---|
| 国 | United States |
| 市 | Boston, MA |
| 期間 | 09/11/30 → 09/12/4 |
フィンガープリント
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
これを引用
Sakai, T., Kiyono, H., & Shimada, S. (2010). Kinetics and mechanism of formation of GaN from β-Ga2O 3 by NH3. ： III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions (pp. 235-240). (Materials Research Society Symposium Proceedings; 巻数 1202).