The kinetics of the generation of E′ centers induced by a 6.4 eV excimer laser were investigated. Enhanced defect generation was observed in OH-containing oxygen-deficient silicas. The increased E′ centers were found to be correlated with an absorption band at 5.7 eV. The intensity of the 5.7 eV band α, as a function of the laser fluence, F, follows a simple formula of α(F) = αs[1 - exp(- DF)], where the values of αs and the decay coefficient, D, depend on the concentrations of SiH and SiOH bonds.
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