Kinetics of enhanced photogeneration of E′ centers in oxygen-deficient silica

Hiroyuki Nishikawa, Eiki Watanabe, Daisuke Ito, Yoshimichi Ohki

研究成果: Article査読

22 被引用数 (Scopus)

抄録

The kinetics of the generation of E′ centers induced by a 6.4 eV excimer laser were investigated. Enhanced defect generation was observed in OH-containing oxygen-deficient silicas. The increased E′ centers were found to be correlated with an absorption band at 5.7 eV. The intensity of the 5.7 eV band α, as a function of the laser fluence, F, follows a simple formula of α(F) = αs[1 - exp(- DF)], where the values of αs and the decay coefficient, D, depend on the concentrations of SiH and SiOH bonds.

本文言語English
ページ(範囲)179-184
ページ数6
ジャーナルJournal of Non-Crystalline Solids
179
C
DOI
出版ステータスPublished - 1994 11月 4
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • セラミックおよび複合材料
  • 凝縮系物理学
  • 材料化学

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