The single-shot pulse laser-induced damaging thresholds (LIDTs), an important laser-optical constant of GaN material, were determined to approximately 34 and 65 nJ upon the irradiation of 400 and 800 nm wavelengths, 150 fs duration laser pulse focused by 40x magnification of dry objective lens (a lateral size of focal spot roughly at 1.22λ/NA, where NA = 0.65). The critical energy of sub-threshold pulses was determined for multi-shot optical damaging. The factors that influenced the LIDTs, optical properties of damaged GaN material and the possibility of laser processing of nitride devices were also discussed.
|ジャーナル||Proceedings of SPIE - The International Society for Optical Engineering|
|出版ステータス||Published - 2000|
|イベント||High-Power Laser Ablation II - Osaka, Jpn|
継続期間: 1999 11月 1 → 1999 11月 5
ASJC Scopus subject areas
- コンピュータ サイエンスの応用