Laser-induced damage threshold and laser processing of GaN

Hong Bo Sun, Saulius Juodkazis, P. G. Eliseev, T. Sugahara, Tao Wang, Shigeki Matsuo, Shiro Sakai, Hiroaki Misawa

研究成果: Conference article

4 引用 (Scopus)

抜粋

The single-shot pulse laser-induced damaging thresholds (LIDTs), an important laser-optical constant of GaN material, were determined to approximately 34 and 65 nJ upon the irradiation of 400 and 800 nm wavelengths, 150 fs duration laser pulse focused by 40x magnification of dry objective lens (a lateral size of focal spot roughly at 1.22λ/NA, where NA = 0.65). The critical energy of sub-threshold pulses was determined for multi-shot optical damaging. The factors that influenced the LIDTs, optical properties of damaged GaN material and the possibility of laser processing of nitride devices were also discussed.

元の言語English
ページ(範囲)311-322
ページ数12
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
3885
DOI
出版物ステータスPublished - 2000
イベントHigh-Power Laser Ablation II - Osaka, Jpn
継続期間: 1999 11 11999 11 5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • これを引用

    Sun, H. B., Juodkazis, S., Eliseev, P. G., Sugahara, T., Wang, T., Matsuo, S., Sakai, S., & Misawa, H. (2000). Laser-induced damage threshold and laser processing of GaN. Proceedings of SPIE - The International Society for Optical Engineering, 3885, 311-322. https://doi.org/10.1117/12.376976