Laser-power dependence of absorption changes in Ge-doped SiO2 glass induced by a KrF excimer laser

Makoto Fujimaki, Kanta Yagi, Yoshimichi Ohki, Hiroyuki Nishikawa

研究成果: Article

28 引用 (Scopus)

抄録

The generation mechanism of the absorption changes, which cause a photorefractive change through the Kramers-Kronig relation in Ge-doped SiO2 glass, has not been clarified yet. In the present paper, we examined the laser-power dependence of the absorption changes around 5 eV, induced by a KrF excimer laser. The induced absorption around 5 eV is composed of three different components, centering at 4.50, 5.08, and 5.80 eV. The increasing behavior of each absorption component depends strongly on the energy density. The three absorption components reach different saturation levels, depending on the energy density. Furthermore, the absorption induced by a high-power KrF excimer laser is bleached by a laser, the energy density of which is about one-twentieth of the inducing laser. Combining the results of mathematical analysis, it was found that a two-photon process and a one-photon process are, respectively, involved with the induction and the bleach of each absorption. It was also found that the precursor defect, which causes the absorption change, is of an oxygen-deficient type.

元の言語English
ページ(範囲)9859-9862
ページ数4
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
53
発行部数15
出版物ステータスPublished - 1996 4 15
外部発表Yes

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Excimer lasers
excimer lasers
Glass
Lasers
glass
Two photon processes
Kramers-Kronig relations
lasers
High power lasers
flux density
Photons
Oxygen
Defects
applications of mathematics
causes
photons
high power lasers
induction
saturation
defects

ASJC Scopus subject areas

  • Condensed Matter Physics

これを引用

Laser-power dependence of absorption changes in Ge-doped SiO2 glass induced by a KrF excimer laser. / Fujimaki, Makoto; Yagi, Kanta; Ohki, Yoshimichi; Nishikawa, Hiroyuki.

:: Physical Review B - Condensed Matter and Materials Physics, 巻 53, 番号 15, 15.04.1996, p. 9859-9862.

研究成果: Article

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