Laser-scanning direction effect in femtosecond laser-assisted etching

Shigeki Matsuo, Yoshifumi Umeda, Takuro Tomita, Shuichi Hashimoto

研究成果: Article

2 引用 (Scopus)

抄録

In this study we examined how the laser-scanning direction during the inscription of modified lines affects to the etching rate along the lines in the femtosecond laser-assisted etching. An isotropic material (silica) was used as the sample. Circular polarization was used for inscribing modified lines, in order to avoid a direction effect arising from polarization. Scanning direction dependence was observed in the etching rate along the modified lines. The relation between the occurrence of a scanning direction effect and the other inscribing pa-rameters (pitch and pulse energy) was examined.

元の言語English
ページ(範囲)35-38
ページ数4
ジャーナルJournal of Laser Micro Nanoengineering
8
発行部数1
DOI
出版物ステータスPublished - 2013 1
外部発表Yes

Fingerprint

Ultrashort pulses
Etching
etching
Scanning
scanning
Lasers
lasers
Circular polarization
circular polarization
Silica
Polarization
occurrences
silicon dioxide
polarization
pulses
energy

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering
  • Instrumentation
  • Electrical and Electronic Engineering

これを引用

Laser-scanning direction effect in femtosecond laser-assisted etching. / Matsuo, Shigeki; Umeda, Yoshifumi; Tomita, Takuro; Hashimoto, Shuichi.

:: Journal of Laser Micro Nanoengineering, 巻 8, 番号 1, 01.2013, p. 35-38.

研究成果: Article

Matsuo, Shigeki ; Umeda, Yoshifumi ; Tomita, Takuro ; Hashimoto, Shuichi. / Laser-scanning direction effect in femtosecond laser-assisted etching. :: Journal of Laser Micro Nanoengineering. 2013 ; 巻 8, 番号 1. pp. 35-38.
@article{d36bdcbde6cb4affb4d2d59c7fba3811,
title = "Laser-scanning direction effect in femtosecond laser-assisted etching",
abstract = "In this study we examined how the laser-scanning direction during the inscription of modified lines affects to the etching rate along the lines in the femtosecond laser-assisted etching. An isotropic material (silica) was used as the sample. Circular polarization was used for inscribing modified lines, in order to avoid a direction effect arising from polarization. Scanning direction dependence was observed in the etching rate along the modified lines. The relation between the occurrence of a scanning direction effect and the other inscribing pa-rameters (pitch and pulse energy) was examined.",
keywords = "Etching rate, Femtosecond laser-assisted etching, KOH, Pulse front tilt., Quill effect, Scanning direction effect, Silica glass",
author = "Shigeki Matsuo and Yoshifumi Umeda and Takuro Tomita and Shuichi Hashimoto",
year = "2013",
month = "1",
doi = "10.2961/jlmn.2013.01.0008",
language = "English",
volume = "8",
pages = "35--38",
journal = "Journal of Laser Micro Nanoengineering",
issn = "1880-0688",
publisher = "Japan Laser Processing",
number = "1",

}

TY - JOUR

T1 - Laser-scanning direction effect in femtosecond laser-assisted etching

AU - Matsuo, Shigeki

AU - Umeda, Yoshifumi

AU - Tomita, Takuro

AU - Hashimoto, Shuichi

PY - 2013/1

Y1 - 2013/1

N2 - In this study we examined how the laser-scanning direction during the inscription of modified lines affects to the etching rate along the lines in the femtosecond laser-assisted etching. An isotropic material (silica) was used as the sample. Circular polarization was used for inscribing modified lines, in order to avoid a direction effect arising from polarization. Scanning direction dependence was observed in the etching rate along the modified lines. The relation between the occurrence of a scanning direction effect and the other inscribing pa-rameters (pitch and pulse energy) was examined.

AB - In this study we examined how the laser-scanning direction during the inscription of modified lines affects to the etching rate along the lines in the femtosecond laser-assisted etching. An isotropic material (silica) was used as the sample. Circular polarization was used for inscribing modified lines, in order to avoid a direction effect arising from polarization. Scanning direction dependence was observed in the etching rate along the modified lines. The relation between the occurrence of a scanning direction effect and the other inscribing pa-rameters (pitch and pulse energy) was examined.

KW - Etching rate

KW - Femtosecond laser-assisted etching

KW - KOH

KW - Pulse front tilt.

KW - Quill effect

KW - Scanning direction effect

KW - Silica glass

UR - http://www.scopus.com/inward/record.url?scp=84877677945&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84877677945&partnerID=8YFLogxK

U2 - 10.2961/jlmn.2013.01.0008

DO - 10.2961/jlmn.2013.01.0008

M3 - Article

AN - SCOPUS:84877677945

VL - 8

SP - 35

EP - 38

JO - Journal of Laser Micro Nanoengineering

JF - Journal of Laser Micro Nanoengineering

SN - 1880-0688

IS - 1

ER -