Level-shifter free approach for multi-Vdd SOTB employing adaptive Vt modulation for pMOSFET

Kimiyoshi Usami, Shunsuke Kogure, Yusuke Yoshida, Ryo Magasaki, Hideharu Amano

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

This paper proposes a level-shifter free (LSF) approach for multi-VDD design to employ a combination of body bias control and a superior threshold-voltage (Vt) modulation capability of SOTB (Silicon on Thin BOX) devices. We applied this approach to a microprocessor test chip with low-voltage (VDDL) and high-voltage (VDDH) domains, and fabricated it in a 65nm SOTB technology. Measurement results demonstrated that the chip correctly operates at VDDL=0.6V and VDDH=1.2V under the reverse-body-bias (RBB) of 2V for pMOS transistors in the VDDH domain while suppressing the static dc current.

本文言語English
ホスト出版物のタイトル2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
出版社Institute of Electrical and Electronics Engineers Inc.
ページ1-3
ページ数3
ISBN(電子版)9781538637654
DOI
出版ステータスPublished - 2018 3 7
イベント2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017 - Burlingame, United States
継続期間: 2017 10 162017 10 18

出版物シリーズ

名前2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
2018-March

Other

Other2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
CountryUnited States
CityBurlingame
Period17/10/1617/10/18

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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