Level-shifter free approach for multi-Vdd SOTB employing adaptive Vt modulation for pMOSFET

Kimiyoshi Usami, Shunsuke Kogure, Yusuke Yoshida, Ryo Magasaki, Hideharu Amano

研究成果: Conference contribution

1 引用 (Scopus)

抄録

This paper proposes a level-shifter free (LSF) approach for multi-VDD design to employ a combination of body bias control and a superior threshold-voltage (Vt) modulation capability of SOTB (Silicon on Thin BOX) devices. We applied this approach to a microprocessor test chip with low-voltage (VDDL) and high-voltage (VDDH) domains, and fabricated it in a 65nm SOTB technology. Measurement results demonstrated that the chip correctly operates at VDDL=0.6V and VDDH=1.2V under the reverse-body-bias (RBB) of 2V for pMOS transistors in the VDDH domain while suppressing the static dc current.

元の言語English
ホスト出版物のタイトル2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
出版者Institute of Electrical and Electronics Engineers Inc.
ページ1-3
ページ数3
2018-March
ISBN(電子版)9781538637654
DOI
出版物ステータスPublished - 2018 3 7
イベント2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017 - Burlingame, United States
継続期間: 2017 10 162017 10 18

Other

Other2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
United States
Burlingame
期間17/10/1617/10/18

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Modulation
Silicon
Electric potential
Threshold voltage
Microprocessor chips
Transistors

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

これを引用

Usami, K., Kogure, S., Yoshida, Y., Magasaki, R., & Amano, H. (2018). Level-shifter free approach for multi-Vdd SOTB employing adaptive Vt modulation for pMOSFET. : 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017 (巻 2018-March, pp. 1-3). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/S3S.2017.8309226

Level-shifter free approach for multi-Vdd SOTB employing adaptive Vt modulation for pMOSFET. / Usami, Kimiyoshi; Kogure, Shunsuke; Yoshida, Yusuke; Magasaki, Ryo; Amano, Hideharu.

2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017. 巻 2018-March Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-3.

研究成果: Conference contribution

Usami, K, Kogure, S, Yoshida, Y, Magasaki, R & Amano, H 2018, Level-shifter free approach for multi-Vdd SOTB employing adaptive Vt modulation for pMOSFET. : 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017. 巻. 2018-March, Institute of Electrical and Electronics Engineers Inc., pp. 1-3, 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017, Burlingame, United States, 17/10/16. https://doi.org/10.1109/S3S.2017.8309226
Usami K, Kogure S, Yoshida Y, Magasaki R, Amano H. Level-shifter free approach for multi-Vdd SOTB employing adaptive Vt modulation for pMOSFET. : 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017. 巻 2018-March. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-3 https://doi.org/10.1109/S3S.2017.8309226
Usami, Kimiyoshi ; Kogure, Shunsuke ; Yoshida, Yusuke ; Magasaki, Ryo ; Amano, Hideharu. / Level-shifter free approach for multi-Vdd SOTB employing adaptive Vt modulation for pMOSFET. 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017. 巻 2018-March Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-3
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