Localization and energy transfer of quasi-two-dimensional excitons in GaAs-AlAs quantum-well heterostructures

T. Takagahara

研究成果: Article査読

193 被引用数 (Scopus)

抄録

A theory of energy transfer of the quasi-two-dimensional excitons in GaAs-AlAs quantum-well heterostructures is developed, and the recently observed slow and nonexponential energy relaxation of excitons is explained quantitatively in terms of the one-phonon-assisted transfer of localized excitons among islandlike structures within a quantum well. The nonexponential behavior of energy relaxation is clarified as a general feature to be observed in the low-energy tail of the density of states. The dependence of the energy relaxation rate on the quantum-well thickness is discussed along with the same dependence of the absorption bandwidth. The correlation between the energy relaxation rate and the absorption bandwidth is explained qualitatively on the basis of the scaling property of the rate equation for the exciton distribution function.

本文言語English
ページ(範囲)6552-6573
ページ数22
ジャーナルPhysical Review B
31
10
DOI
出版ステータスPublished - 1985 1 1
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学

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