Localization and homogeneous dephasing relaxation of quasi-two-dimensional excitons in quantum well heterostructures

Toshihide Takagahara

doi:10.1016/0039-6028(86)91034-4

Localization and homogeneous dephasing relaxation of quasi-two-dimensional excitons in quantum well heterostructures

Toshihide Takagahara

研究成果: Article › 査読

抄録

The mechanisms of dephasing relaxation (homogeneous linewidth) of quasi-two-dimensional excitons in quantum well heterostructures are clarified for both the localized and delocalized excitons. The recently observed energy and temperature dependences of the homogeneous linewidth Γ_h are explained quantitatively. Furthermore, a new exponent of temperature dependence of Γ_h of the localized excitons at low temperatures, the energy dependence of Γ_h of the delocalized excitons and the dependence of Γ_h on the quantum well thickness are predicted.

本文言語	English
ページ（範囲）	645-650
ページ数	6
ジャーナル	Surface Science
巻	170
号	1-2
DOI	https://doi.org/10.1016/0039-6028(86)91034-4
出版ステータス	Published - 1986 4月 3
外部発表	はい

ASJC Scopus subject areas

凝縮系物理学
表面および界面
表面、皮膜および薄膜
材料化学

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10.1016/0039-6028(86)91034-4

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author = "Toshihide Takagahara",

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AU - Takagahara, Toshihide

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N2 - The mechanisms of dephasing relaxation (homogeneous linewidth) of quasi-two-dimensional excitons in quantum well heterostructures are clarified for both the localized and delocalized excitons. The recently observed energy and temperature dependences of the homogeneous linewidth Γh are explained quantitatively. Furthermore, a new exponent of temperature dependence of Γh of the localized excitons at low temperatures, the energy dependence of Γh of the delocalized excitons and the dependence of Γh on the quantum well thickness are predicted.

AB - The mechanisms of dephasing relaxation (homogeneous linewidth) of quasi-two-dimensional excitons in quantum well heterostructures are clarified for both the localized and delocalized excitons. The recently observed energy and temperature dependences of the homogeneous linewidth Γh are explained quantitatively. Furthermore, a new exponent of temperature dependence of Γh of the localized excitons at low temperatures, the energy dependence of Γh of the delocalized excitons and the dependence of Γh on the quantum well thickness are predicted.

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Localization and homogeneous dephasing relaxation of quasi-two-dimensional excitons in quantum well heterostructures

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