抄録
The mechanisms of dephasing relaxation (homogeneous linewidth) of quasi-two-dimensional excitons in quantum well heterostructures are clarified for both the localized and delocalized excitons. The recently observed energy and temperature dependences of the homogeneous linewidth Γh are explained quantitatively. Furthermore, a new exponent of temperature dependence of Γh of the localized excitons at low temperatures, the energy dependence of Γh of the delocalized excitons and the dependence of Γh on the quantum well thickness are predicted.
本文言語 | English |
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ページ(範囲) | 645-650 |
ページ数 | 6 |
ジャーナル | Surface Science |
巻 | 170 |
号 | 1-2 |
DOI | |
出版ステータス | Published - 1986 4月 3 |
外部発表 | はい |
ASJC Scopus subject areas
- 凝縮系物理学
- 表面および界面
- 表面、皮膜および薄膜
- 材料化学