Ir/Ni/Ir metallisation was employed as Schottky contacts of GaN Sohottky photodiodes. After annealing at 500°C in O2 for 1 min, the Schottky contact achieved the maximum barrier height of 1.28 eV and the minimum dark current densities of 1.8 × 10-10 A/cm2 at -5 V bias. The peak responsivity is 105 mA/ W at zero bias and increases to 150 mA/W at -15 V bias. The detectivity was estimated as 5.8 × 1015 cmHz1/2W-1 at zero bias.
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