Low-Frequency Noise Performance of Self-Aligned Inaias/InGaAs Heterojunction Bipolar Transistors

S. Tanaka, H. Hayama, K. Honjo, A. Furukawa, T. Baba, M. Mizuta

研究成果: Article

26 引用 (Scopus)

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The first measurement of low-frequency noise performance for self-aligned InAIAs/InGaAs HBTs is reported. The l/f noise obtained was around 20 dB lower than that for AlGaAs/GaAs HBTs at a fixed frequency, which is considered to be caused by the low surface recombination velocity of InGaAs.

元の言語English
ページ(範囲)1439-1441
ページ数3
ジャーナルElectronics Letters
26
発行部数18
DOI
出版物ステータスPublished - 1990 1

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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