抜粋
A new metal structure consisting of AuZnNi/Ti/Au has been proposed for forming low-resistance ohmic contacts to p-GaAs with a fine-pattern definition. The dependency of the contact resistance on the Ti-layer thickness indicated that an optimum amount of Ti is requred for reducing the contact resistance. A minimun contact resistance (0.3 12-mm) was obtained with 150-nm thick Ti attached to Be-implanted p-GaAs at a dose of 6X 1013 cm-3.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 1268-1269 |
| ページ数 | 2 |
| ジャーナル | Japanese Journal of Applied Physics |
| 巻 | 25 |
| 発行部数 | 8 |
| DOI |
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| 出版物ステータス | Published - 1986 8 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
フィンガープリント Low-resistance ohmic contacts to p-GaAs' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Hirano, M., & Yanagawa, F. (1986). Low-resistance ohmic contacts to p-GaAs. Japanese Journal of Applied Physics, 25(8), 1268-1269. https://doi.org/10.1143/JJAP.25.1268