TY - JOUR
T1 - Low-resistance ohmic contacts to p-GaAs
AU - Hirano, Makoto
AU - Yanagawa, Fumihiko
PY - 1986/8
Y1 - 1986/8
N2 - A new metal structure consisting of AuZnNi/Ti/Au has been proposed for forming low-resistance ohmic contacts to p-GaAs with a fine-pattern definition. The dependency of the contact resistance on the Ti-layer thickness indicated that an optimum amount of Ti is requred for reducing the contact resistance. A minimun contact resistance (0.3 12-mm) was obtained with 150-nm thick Ti attached to Be-implanted p-GaAs at a dose of 6X 1013 cm-3.
AB - A new metal structure consisting of AuZnNi/Ti/Au has been proposed for forming low-resistance ohmic contacts to p-GaAs with a fine-pattern definition. The dependency of the contact resistance on the Ti-layer thickness indicated that an optimum amount of Ti is requred for reducing the contact resistance. A minimun contact resistance (0.3 12-mm) was obtained with 150-nm thick Ti attached to Be-implanted p-GaAs at a dose of 6X 1013 cm-3.
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U2 - 10.1143/JJAP.25.1268
DO - 10.1143/JJAP.25.1268
M3 - Comment/debate
AN - SCOPUS:0022762906
VL - 25
SP - 1268
EP - 1269
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8
ER -