Low-temperature (330 °C) crystallization and dopant activation of Ge thin films via AgSb-induced layer exchange: Operation of an n-channel polycrystalline Ge thin-film transistor

Tatsuya Suzuki, Benedict Mutunga Joseph, Misato Fukai, Masao Kamiko, Kentaro Kyuno

研究成果: Article査読

10 被引用数 (Scopus)

抄録

Ge thin films have been prepared by layer-exchange metal-induced crystallization using AgSb alloy as a catalyst. Not only the crystallization of Ge, but also the incorporation of Sb atoms into the crystalline Ge layer and their activation have been realized during the process at a temperature as low as 330 °C. Thin-film transistors have been fabricated using the Ge thin films as channel layers and the operation of an n-channel transistor with an on/off ratio of over 300 has been demonstrated.

本文言語English
論文番号095502
ジャーナルApplied Physics Express
10
9
DOI
出版ステータスPublished - 2017 9

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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