Low temperature interlayer formation technology using a new siloxane polymer film

M. Suzuki, T. Homma, Y. Numasawa

研究成果: Paper

3 引用 (Scopus)

抜粋

A new technology for low-temperature dielectric film formation under Al wirings is described. This technology utilizes spin-on film formed from the organic siloxane polymer solution optimized to have minimal film shrinkage/stress generation during heat treatment. The optimized solution is composed of 62-mo1% tetra-ethoxy-silane [Si(OEt)4], 31-mo1% methyl-tri-ethoxy-silane [Me-Si(OEt)3], and 7-mo1%4 phosphorus-triethoxide [PO(OEt)3] oligomer in ethyl alcohol. Crack-free thick siloxane polymer film with no carbon is formed by three-step heat treatment processes (150°C hot plate baking, 400°C furnace annealing in N2, and 800°C furnace annealing in O2). The planarization capability of this film is superior to that of the conventional BPSG reflow film, and other film properties are as good as those of the CVD-PSG film.

元の言語English
ページ173-179
ページ数7
出版物ステータスPublished - 1990 12 1
外部発表Yes
イベント1990 Proceedings of the Seventh International IEEE VLSI Multilevel Interconnection Conference - Santa Clara, CA, USA
継続期間: 1990 6 121990 6 13

Other

Other1990 Proceedings of the Seventh International IEEE VLSI Multilevel Interconnection Conference
Santa Clara, CA, USA
期間90/6/1290/6/13

ASJC Scopus subject areas

  • Engineering(all)

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  • これを引用

    Suzuki, M., Homma, T., & Numasawa, Y. (1990). Low temperature interlayer formation technology using a new siloxane polymer film. 173-179. 論文発表場所 1990 Proceedings of the Seventh International IEEE VLSI Multilevel Interconnection Conference, Santa Clara, CA, USA, .