抄録
A new technology for low-temperature dielectric film formation under Al wirings is described. This technology utilizes spin-on film formed from the organic siloxane polymer solution optimized to have minimal film shrinkage/stress generation during heat treatment. The optimized solution is composed of 62-mo1% tetra-ethoxy-silane [Si(OEt)4], 31-mo1% methyl-tri-ethoxy-silane [Me-Si(OEt)3], and 7-mo1%4 phosphorus-triethoxide [PO(OEt)3] oligomer in ethyl alcohol. Crack-free thick siloxane polymer film with no carbon is formed by three-step heat treatment processes (150°C hot plate baking, 400°C furnace annealing in N2, and 800°C furnace annealing in O2). The planarization capability of this film is superior to that of the conventional BPSG reflow film, and other film properties are as good as those of the CVD-PSG film.
| 元の言語 | English |
|---|---|
| ホスト出版物のタイトル | Proceedings - International IEEE VLSI Multilevel Interconnection Conference |
| 出版場所 | Piscataway, NJ, United States |
| 出版者 | Publ by IEEE |
| ページ | 173-179 |
| ページ数 | 7 |
| 出版物ステータス | Published - 1990 |
| 外部発表 | Yes |
| イベント | 1990 Proceedings of the Seventh International IEEE VLSI Multilevel Interconnection Conference - Santa Clara, CA, USA 継続期間: 1990 6 12 → 1990 6 13 |
Other
| Other | 1990 Proceedings of the Seventh International IEEE VLSI Multilevel Interconnection Conference |
|---|---|
| 市 | Santa Clara, CA, USA |
| 期間 | 90/6/12 → 90/6/13 |
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ASJC Scopus subject areas
- Engineering(all)
これを引用
Low temperature interlayer formation technology using a new siloxane polymer film. / Suzuki, M.; Homma, Tetsuya; Numasawa, Y.
Proceedings - International IEEE VLSI Multilevel Interconnection Conference. Piscataway, NJ, United States : Publ by IEEE, 1990. p. 173-179.研究成果: Conference contribution
}
TY - GEN
T1 - Low temperature interlayer formation technology using a new siloxane polymer film
AU - Suzuki, M.
AU - Homma, Tetsuya
AU - Numasawa, Y.
PY - 1990
Y1 - 1990
N2 - A new technology for low-temperature dielectric film formation under Al wirings is described. This technology utilizes spin-on film formed from the organic siloxane polymer solution optimized to have minimal film shrinkage/stress generation during heat treatment. The optimized solution is composed of 62-mo1% tetra-ethoxy-silane [Si(OEt)4], 31-mo1% methyl-tri-ethoxy-silane [Me-Si(OEt)3], and 7-mo1%4 phosphorus-triethoxide [PO(OEt)3] oligomer in ethyl alcohol. Crack-free thick siloxane polymer film with no carbon is formed by three-step heat treatment processes (150°C hot plate baking, 400°C furnace annealing in N2, and 800°C furnace annealing in O2). The planarization capability of this film is superior to that of the conventional BPSG reflow film, and other film properties are as good as those of the CVD-PSG film.
AB - A new technology for low-temperature dielectric film formation under Al wirings is described. This technology utilizes spin-on film formed from the organic siloxane polymer solution optimized to have minimal film shrinkage/stress generation during heat treatment. The optimized solution is composed of 62-mo1% tetra-ethoxy-silane [Si(OEt)4], 31-mo1% methyl-tri-ethoxy-silane [Me-Si(OEt)3], and 7-mo1%4 phosphorus-triethoxide [PO(OEt)3] oligomer in ethyl alcohol. Crack-free thick siloxane polymer film with no carbon is formed by three-step heat treatment processes (150°C hot plate baking, 400°C furnace annealing in N2, and 800°C furnace annealing in O2). The planarization capability of this film is superior to that of the conventional BPSG reflow film, and other film properties are as good as those of the CVD-PSG film.
UR - http://www.scopus.com/inward/record.url?scp=0025545495&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0025545495&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0025545495
SP - 173
EP - 179
BT - Proceedings - International IEEE VLSI Multilevel Interconnection Conference
PB - Publ by IEEE
CY - Piscataway, NJ, United States
ER -