A new technology for low-temperature dielectric film formation under Al wirings is described. This technology utilizes spin-on film formed from the organic siloxane polymer solution optimized to have minimal film shrinkage/stress generation during heat treatment. The optimized solution is composed of 62-mo1% tetra-ethoxy-silane [Si(OEt)4], 31-mo1% methyl-tri-ethoxy-silane [Me-Si(OEt)3], and 7-mo1%4 phosphorus-triethoxide [PO(OEt)3] oligomer in ethyl alcohol. Crack-free thick siloxane polymer film with no carbon is formed by three-step heat treatment processes (150°C hot plate baking, 400°C furnace annealing in N2, and 800°C furnace annealing in O2). The planarization capability of this film is superior to that of the conventional BPSG reflow film, and other film properties are as good as those of the CVD-PSG film.
|出版ステータス||Published - 1990 12月 1|
|イベント||1990 Proceedings of the Seventh International IEEE VLSI Multilevel Interconnection Conference - Santa Clara, CA, USA|
継続期間: 1990 6月 12 → 1990 6月 13
|Other||1990 Proceedings of the Seventh International IEEE VLSI Multilevel Interconnection Conference|
|City||Santa Clara, CA, USA|
|Period||90/6/12 → 90/6/13|
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