Low temperature interlayer formation technology using a new siloxane polymer film

M. Suzuki, Tetsuya Homma, Y. Numasawa

研究成果: Conference contribution

3 引用 (Scopus)

抄録

A new technology for low-temperature dielectric film formation under Al wirings is described. This technology utilizes spin-on film formed from the organic siloxane polymer solution optimized to have minimal film shrinkage/stress generation during heat treatment. The optimized solution is composed of 62-mo1% tetra-ethoxy-silane [Si(OEt)4], 31-mo1% methyl-tri-ethoxy-silane [Me-Si(OEt)3], and 7-mo1%4 phosphorus-triethoxide [PO(OEt)3] oligomer in ethyl alcohol. Crack-free thick siloxane polymer film with no carbon is formed by three-step heat treatment processes (150°C hot plate baking, 400°C furnace annealing in N2, and 800°C furnace annealing in O2). The planarization capability of this film is superior to that of the conventional BPSG reflow film, and other film properties are as good as those of the CVD-PSG film.

元の言語English
ホスト出版物のタイトルProceedings - International IEEE VLSI Multilevel Interconnection Conference
出版場所Piscataway, NJ, United States
出版者Publ by IEEE
ページ173-179
ページ数7
出版物ステータスPublished - 1990
外部発表Yes
イベント1990 Proceedings of the Seventh International IEEE VLSI Multilevel Interconnection Conference - Santa Clara, CA, USA
継続期間: 1990 6 121990 6 13

Other

Other1990 Proceedings of the Seventh International IEEE VLSI Multilevel Interconnection Conference
Santa Clara, CA, USA
期間90/6/1290/6/13

Fingerprint

Polymer films
Silanes
Temperature
Furnaces
Heat treatment
Annealing
Organic polymers
Dielectric films
Electric wiring
Polymer solutions
Oligomers
Thick films
Phosphorus
Chemical vapor deposition
Ethanol
Cracks
Carbon

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Suzuki, M., Homma, T., & Numasawa, Y. (1990). Low temperature interlayer formation technology using a new siloxane polymer film. : Proceedings - International IEEE VLSI Multilevel Interconnection Conference (pp. 173-179). Piscataway, NJ, United States: Publ by IEEE.

Low temperature interlayer formation technology using a new siloxane polymer film. / Suzuki, M.; Homma, Tetsuya; Numasawa, Y.

Proceedings - International IEEE VLSI Multilevel Interconnection Conference. Piscataway, NJ, United States : Publ by IEEE, 1990. p. 173-179.

研究成果: Conference contribution

Suzuki, M, Homma, T & Numasawa, Y 1990, Low temperature interlayer formation technology using a new siloxane polymer film. : Proceedings - International IEEE VLSI Multilevel Interconnection Conference. Publ by IEEE, Piscataway, NJ, United States, pp. 173-179, 1990 Proceedings of the Seventh International IEEE VLSI Multilevel Interconnection Conference, Santa Clara, CA, USA, 90/6/12.
Suzuki M, Homma T, Numasawa Y. Low temperature interlayer formation technology using a new siloxane polymer film. : Proceedings - International IEEE VLSI Multilevel Interconnection Conference. Piscataway, NJ, United States: Publ by IEEE. 1990. p. 173-179
Suzuki, M. ; Homma, Tetsuya ; Numasawa, Y. / Low temperature interlayer formation technology using a new siloxane polymer film. Proceedings - International IEEE VLSI Multilevel Interconnection Conference. Piscataway, NJ, United States : Publ by IEEE, 1990. pp. 173-179
@inproceedings{bf41c7d161484fb9a3f97675efadca2d,
title = "Low temperature interlayer formation technology using a new siloxane polymer film",
abstract = "A new technology for low-temperature dielectric film formation under Al wirings is described. This technology utilizes spin-on film formed from the organic siloxane polymer solution optimized to have minimal film shrinkage/stress generation during heat treatment. The optimized solution is composed of 62-mo1{\%} tetra-ethoxy-silane [Si(OEt)4], 31-mo1{\%} methyl-tri-ethoxy-silane [Me-Si(OEt)3], and 7-mo1{\%}4 phosphorus-triethoxide [PO(OEt)3] oligomer in ethyl alcohol. Crack-free thick siloxane polymer film with no carbon is formed by three-step heat treatment processes (150°C hot plate baking, 400°C furnace annealing in N2, and 800°C furnace annealing in O2). The planarization capability of this film is superior to that of the conventional BPSG reflow film, and other film properties are as good as those of the CVD-PSG film.",
author = "M. Suzuki and Tetsuya Homma and Y. Numasawa",
year = "1990",
language = "English",
pages = "173--179",
booktitle = "Proceedings - International IEEE VLSI Multilevel Interconnection Conference",
publisher = "Publ by IEEE",

}

TY - GEN

T1 - Low temperature interlayer formation technology using a new siloxane polymer film

AU - Suzuki, M.

AU - Homma, Tetsuya

AU - Numasawa, Y.

PY - 1990

Y1 - 1990

N2 - A new technology for low-temperature dielectric film formation under Al wirings is described. This technology utilizes spin-on film formed from the organic siloxane polymer solution optimized to have minimal film shrinkage/stress generation during heat treatment. The optimized solution is composed of 62-mo1% tetra-ethoxy-silane [Si(OEt)4], 31-mo1% methyl-tri-ethoxy-silane [Me-Si(OEt)3], and 7-mo1%4 phosphorus-triethoxide [PO(OEt)3] oligomer in ethyl alcohol. Crack-free thick siloxane polymer film with no carbon is formed by three-step heat treatment processes (150°C hot plate baking, 400°C furnace annealing in N2, and 800°C furnace annealing in O2). The planarization capability of this film is superior to that of the conventional BPSG reflow film, and other film properties are as good as those of the CVD-PSG film.

AB - A new technology for low-temperature dielectric film formation under Al wirings is described. This technology utilizes spin-on film formed from the organic siloxane polymer solution optimized to have minimal film shrinkage/stress generation during heat treatment. The optimized solution is composed of 62-mo1% tetra-ethoxy-silane [Si(OEt)4], 31-mo1% methyl-tri-ethoxy-silane [Me-Si(OEt)3], and 7-mo1%4 phosphorus-triethoxide [PO(OEt)3] oligomer in ethyl alcohol. Crack-free thick siloxane polymer film with no carbon is formed by three-step heat treatment processes (150°C hot plate baking, 400°C furnace annealing in N2, and 800°C furnace annealing in O2). The planarization capability of this film is superior to that of the conventional BPSG reflow film, and other film properties are as good as those of the CVD-PSG film.

UR - http://www.scopus.com/inward/record.url?scp=0025545495&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025545495&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0025545495

SP - 173

EP - 179

BT - Proceedings - International IEEE VLSI Multilevel Interconnection Conference

PB - Publ by IEEE

CY - Piscataway, NJ, United States

ER -