Low temperature plasmaless etching of silicon dioxide film using chlorine trifluoride gas with water vapor

Makoto Saito, Yoshinori Kataoka, Tetsuya Homma, Takao Nagatomo

研究成果: Article査読

9 被引用数 (Scopus)

抄録

The etching characteristics of silicon dioxide (SiO2) films using chlorine trifluoride (ClF3) gas with water (H2O) vapor, without using the gas discharge method, have been studied. When the sample was cooled to -50 °C, a high SiO2 etching rate of 400 nm/mix was obtained. On the basis of in situ Fourier transform infrared spectroscopic analysis for the vapor phase and for the sample surface, the etching mechanism of the high SiO2 etching rate was proposed. The mechanism consists of (i) adsorption of H2O onto the sample surface at low temperatures, (ii) hydrogen fluoride ion (HF2-) formation by the reaction of hydrogen fluoride (HF) with H2O, in which the HF is formed by the hydrolysis of ClF3, (iii) silicon tetrafluoride (SiF4) formation by the reaction of HF2- with Si in SiO2 networks, and (iv) desorption of SiF4 as a gas from the SiO2 surface. It has been confirmed that low temperature plasmaless etching using a ClF3/H2O gas mixture is effective for the removal of SiO2 films. In addition, the etch rate for polycrystalline silicon (poly-Si) can be controlled by changing the substrate temperature from 25 to -50 °C. This property allows for the sequential etching of native oxide and poly-Si films.

本文言語English
ページ(範囲)4630-4632
ページ数3
ジャーナルJournal of the Electrochemical Society
147
12
DOI
出版ステータスPublished - 2000 12 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜
  • 電気化学
  • 材料化学

フィンガープリント

「Low temperature plasmaless etching of silicon dioxide film using chlorine trifluoride gas with water vapor」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル