Low-Temperature synthesis of multilayer graphene directly on SiO2 by current-enhanced solid-phase deposition using Ni catalyst

Tomohiro Tamura, Kazuyoshi Ueno

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Low-Temperature deposition of multilayer graphene (MLG) directly on devices without transfer process is a critical issue for the realization of device applications of MLG such as interconnects and electrodes. Low-Temperature synthesis of MLG at around 400 °C is obtained by current-enhanced solid-phase deposition (CE-SPD) using Ni as a catalyst, where current is applied to the C/Ni layer during annealing. MLG crystallinity, which is indicated by G/D ratio in Raman spectra, was improved about four times by applying current, compared to that without current at the same temperature. As the current increases, the G/D ratio is improved. It is considered that current has an effect in enhancing the grain-growth of MLG besides Joule's heat and it leads to lower synthesis temperature.

本文言語English
論文番号066501
ジャーナルJapanese Journal of Applied Physics
59
6
DOI
出版ステータスPublished - 2020 6 1

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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