Low temperature wafer direct bonding between GaInAsP etch stop layer and Gd3Ga5O12

Hideki Yokoi, Tetsuya Mizumoto

研究成果: Conference contribution

抄録

The direct bonding between GaInAsP and Gd3Ga5O12 (GGG) is reported. All wafers were chemically treated, and contacted at room temperature. The bonded samples were subjected to various device fabrication processes such as baking, thermal annealing, wet etching and exposure to the plasma discharge, for examining the bonding durability. The bonding was achieved with the heat treatment at temperatures between 110 and 330°C. The samples bonded by the heat treatment at 110 and 220°C remained bonded against all the processes. The bonding between a terraced laser diode and GGG was also performed. The GaInAsP etched surface was bonded with GGG by heat treatment at temperatures between 110 and 220°C.

元の言語English
ホスト出版物のタイトルConference on Lasers and Electro-Optics Europe - Technical Digest
出版場所Piscataway, NJ, United States
出版者IEEE
ページ336
ページ数1
出版物ステータスPublished - 1998
外部発表Yes
イベントProceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 - Glasgow, Scotland
継続期間: 1998 9 141998 9 18

Other

OtherProceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98
Glasgow, Scotland
期間98/9/1498/9/18

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Heat treatment
Temperature
Wet etching
Semiconductor lasers
Durability
Annealing
Plasmas
Fabrication
Hot Temperature

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

これを引用

Yokoi, H., & Mizumoto, T. (1998). Low temperature wafer direct bonding between GaInAsP etch stop layer and Gd3Ga5O12. : Conference on Lasers and Electro-Optics Europe - Technical Digest (pp. 336). Piscataway, NJ, United States: IEEE.

Low temperature wafer direct bonding between GaInAsP etch stop layer and Gd3Ga5O12. / Yokoi, Hideki; Mizumoto, Tetsuya.

Conference on Lasers and Electro-Optics Europe - Technical Digest. Piscataway, NJ, United States : IEEE, 1998. p. 336.

研究成果: Conference contribution

Yokoi, H & Mizumoto, T 1998, Low temperature wafer direct bonding between GaInAsP etch stop layer and Gd3Ga5O12. : Conference on Lasers and Electro-Optics Europe - Technical Digest. IEEE, Piscataway, NJ, United States, pp. 336, Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98, Glasgow, Scotland, 98/9/14.
Yokoi H, Mizumoto T. Low temperature wafer direct bonding between GaInAsP etch stop layer and Gd3Ga5O12. : Conference on Lasers and Electro-Optics Europe - Technical Digest. Piscataway, NJ, United States: IEEE. 1998. p. 336
Yokoi, Hideki ; Mizumoto, Tetsuya. / Low temperature wafer direct bonding between GaInAsP etch stop layer and Gd3Ga5O12. Conference on Lasers and Electro-Optics Europe - Technical Digest. Piscataway, NJ, United States : IEEE, 1998. pp. 336
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