Luminescence properties of defects in P+- or B+-implanted thermally grown silicon dioxide

K. S. Seol, A. Ieki, Y. Ohki, H. Nishikawa, M. Takiyama

研究成果: Paper査読

3 被引用数 (Scopus)

抄録

The photoluminescence (PL) spectra from P+- or B+-implanted thermally grown film obtained by synchrotron radiation and excimer laser are studied and the nature of the defects induced by the ion implantation is discussed. Results show that under the excitation of KrF excimer laser, three PL bands at 4.3 eV, 2.7 eV, and 1.9 eV are observed. As for the PL bands at 4.3 eV and 1.9 eV, the intensity increases with a decrease in the temperature, while it decreases for the PL at 2.7 eV. From the similarities of the temperature dependence and the decay profile between the present ion-implanted SiO2 film and the well-identified bulk silica glass, the two PL bands at 4.3 eV and 2.7 eV are attributable to the oxygen vacancy, while the PL at 1.9 eV is from NBOHC.

本文言語English
ページ85-88
ページ数4
出版ステータスPublished - 1995 12 1
外部発表はい
イベントProceedings of the 1995 International Symposium on Electrical Insulating Materials - Tokyo, Jpn
継続期間: 1995 9 171995 9 20

Other

OtherProceedings of the 1995 International Symposium on Electrical Insulating Materials
CityTokyo, Jpn
Period95/9/1795/9/20

ASJC Scopus subject areas

  • Engineering(all)

フィンガープリント 「Luminescence properties of defects in P<sup>+</sup>- or B<sup>+</sup>-implanted thermally grown silicon dioxide」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル