The photoluminescence (PL) spectra from P+- or B+-implanted thermally grown film obtained by synchrotron radiation and excimer laser are studied and the nature of the defects induced by the ion implantation is discussed. Results show that under the excitation of KrF excimer laser, three PL bands at 4.3 eV, 2.7 eV, and 1.9 eV are observed. As for the PL bands at 4.3 eV and 1.9 eV, the intensity increases with a decrease in the temperature, while it decreases for the PL at 2.7 eV. From the similarities of the temperature dependence and the decay profile between the present ion-implanted SiO2 film and the well-identified bulk silica glass, the two PL bands at 4.3 eV and 2.7 eV are attributable to the oxygen vacancy, while the PL at 1.9 eV is from NBOHC.
|出版ステータス||Published - 1995 12月 1|
|イベント||Proceedings of the 1995 International Symposium on Electrical Insulating Materials - Tokyo, Jpn|
継続期間: 1995 9月 17 → 1995 9月 20
|Other||Proceedings of the 1995 International Symposium on Electrical Insulating Materials|
|Period||95/9/17 → 95/9/20|
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