Magnetooptic waveguide with SiO2 cladding layer integrated on InP substrate by wafer direct bonding

Hideki Yokoi, Tetsuya Mizumoto

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Magnetooptic waveguides with a SiO2 cladding layer were fabricated on an InP substrate by the wafer direct bonding technique for the purpose of integrating a laser diode and an optical isolator. First, direct bonding between InP and sputter-deposited SiO2 on a Gd3Ga5O12 substrate was investigated. Bonding was achieved by surface treatment of both wafers and subsequent heat treatment in H2 ambient. By applying heat treatment in H2 ambient at temperatures ranging between 110 and 220°C, the magnetooptic waveguides were bonded to the InP substrate without deterioration of their optical properties.

本文言語English
ページ(範囲)7230-7232
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
36
12 A
DOI
出版ステータスPublished - 1997 12
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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