TY - JOUR
T1 - Magnetooptic waveguide with SiO2 cladding layer integrated on InP substrate by wafer direct bonding
AU - Yokoi, Hideki
AU - Mizumoto, Tetsuya
PY - 1997/12
Y1 - 1997/12
N2 - Magnetooptic waveguides with a SiO2 cladding layer were fabricated on an InP substrate by the wafer direct bonding technique for the purpose of integrating a laser diode and an optical isolator. First, direct bonding between InP and sputter-deposited SiO2 on a Gd3Ga5O12 substrate was investigated. Bonding was achieved by surface treatment of both wafers and subsequent heat treatment in H2 ambient. By applying heat treatment in H2 ambient at temperatures ranging between 110 and 220°C, the magnetooptic waveguides were bonded to the InP substrate without deterioration of their optical properties.
AB - Magnetooptic waveguides with a SiO2 cladding layer were fabricated on an InP substrate by the wafer direct bonding technique for the purpose of integrating a laser diode and an optical isolator. First, direct bonding between InP and sputter-deposited SiO2 on a Gd3Ga5O12 substrate was investigated. Bonding was achieved by surface treatment of both wafers and subsequent heat treatment in H2 ambient. By applying heat treatment in H2 ambient at temperatures ranging between 110 and 220°C, the magnetooptic waveguides were bonded to the InP substrate without deterioration of their optical properties.
KW - InP
KW - Magnetooptic waveguide
KW - SiO optical isolator
KW - Wafer direct bonding
UR - http://www.scopus.com/inward/record.url?scp=0031343652&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031343652&partnerID=8YFLogxK
U2 - 10.1143/jjap.36.7230
DO - 10.1143/jjap.36.7230
M3 - Article
AN - SCOPUS:0031343652
VL - 36
SP - 7230
EP - 7232
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12 A
ER -