Manipulating the Solubility of SnSe in SnTe by Br Doping for Improving the Thermoelectric Performance

Zhongwei Zhang, Wenjing Xu, Chengyan Liu, Fucong Li, Hengquan Yang, Xiaoyang Wang, Jie Gao, Chen Chen, Qian Zhang, Jing Liu, Xiaobo Bai, Ying Peng, Lei Miao

研究成果: Article査読

1 被引用数 (Scopus)

抄録

As a potential thermoelectric (TE) candidate with a rock salt structure similar to PbTe, SnTe has attracted much attention in recent years. However, a high carrier concentration caused by its inherent Sn vacancy severely lowers the TE performance. In this study, it is found that the introduction of Br on the basis of Se doping not only manipulates the carrier concentration but also reduces the solubility of SnSe in SnTe to form SnSe nanoprecipitates with suitable sizes (<10 nm) to scatter phonons. Thereby, the power factor is improved (∼1943 μW m-1 K-2) and the thermal conductivity is reduced (∼2.13 W m-1 K-1), pushing the zT value up to ∼0.75 (Sn1.03Se0.12Te0.870Br0.010) at 823 K. This study combines the carrier and chemical solubility engineering by halogen doping and provides an approach to improve the TE performance of materials with similar structures.

本文言語English
ページ(範囲)13027-13035
ページ数9
ジャーナルACS Applied Energy Materials
4
11
DOI
出版ステータスPublished - 2021 11月 22

ASJC Scopus subject areas

  • 化学工学(その他)
  • エネルギー工学および電力技術
  • 電気化学
  • 電子工学および電気工学
  • 材料化学

フィンガープリント

「Manipulating the Solubility of SnSe in SnTe by Br Doping for Improving the Thermoelectric Performance」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル