Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET

Shohei Nakamura, Jun Kawasaki, Yuichi Kumagai, Kimiyoshi Usami

研究成果: Conference contribution

12 引用 (Scopus)

抜粋

This paper aims to measure the minimum energy point of logic circuits using SOTB and a bulk device, and to study the characteristics of logic circuits in SOTB at ultra-low voltage. We designed test chips including 32bit adder and 16bit multiplier circuits in 65nm SOTB and 65nm bulk devices. Measurement results revealed that the minimum energy of SOTB is about 39-49% smaller than that of the bulk The minimum energy voltage of SOTB is 0.25-0.3V, while that of the bulk is 0.35-0.45V. Measurement results also revealed that energy minimum voltage is proportional to the absolute temperature.

元の言語English
ホスト出版物のタイトルEUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
出版者Institute of Electrical and Electronics Engineers Inc.
ページ193-196
ページ数4
ISBN(印刷物)9781479969111
DOI
出版物ステータスPublished - 2015 3 18
イベント2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 - Bologna, Italy
継続期間: 2015 1 262015 1 28

Other

Other2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015
Italy
Bologna
期間15/1/2615/1/28

    フィンガープリント

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Nakamura, S., Kawasaki, J., Kumagai, Y., & Usami, K. (2015). Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET. : EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (pp. 193-196). [7063746] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ULIS.2015.7063746