Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET

Shohei Nakamura; Jun Kawasaki; Yuichi Kumagai; Kimiyoshi Usami

doi:10.1109/ULIS.2015.7063746

Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET

Shohei Nakamura, Jun Kawasaki, Yuichi Kumagai, Kimiyoshi Usami

研究成果: Conference contribution

12 被引用数 (Scopus)

抄録

This paper aims to measure the minimum energy point of logic circuits using SOTB and a bulk device, and to study the characteristics of logic circuits in SOTB at ultra-low voltage. We designed test chips including 32bit adder and 16bit multiplier circuits in 65nm SOTB and 65nm bulk devices. Measurement results revealed that the minimum energy of SOTB is about 39-49% smaller than that of the bulk The minimum energy voltage of SOTB is 0.25-0.3V, while that of the bulk is 0.35-0.45V. Measurement results also revealed that energy minimum voltage is proportional to the absolute temperature.

本文言語	English
ホスト出版物のタイトル	EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	193-196
ページ数	4
ISBN（印刷版）	9781479969111
DOI	https://doi.org/10.1109/ULIS.2015.7063746
出版ステータス	Published - 2015 3月 18
イベント	2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 - Bologna, Italy 継続期間: 2015 1月 26 → 2015 1月 28

Other

Other	2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015
国/地域	Italy
City	Bologna
Period	15/1/26 → 15/1/28

ASJC Scopus subject areas

電子工学および電気工学

文献へのアクセス

10.1109/ULIS.2015.7063746

他のファイルとリンク

引用スタイル

Nakamura, S., Kawasaki, J., Kumagai, Y., & Usami, K. (2015). Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET. In EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (pp. 193-196). [7063746] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ULIS.2015.7063746

Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET. / Nakamura, Shohei; Kawasaki, Jun; Kumagai, Yuichi その他.

EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon. Institute of Electrical and Electronics Engineers Inc., 2015. p. 193-196 7063746.

研究成果: Conference contribution

Nakamura, S, Kawasaki, J, Kumagai, Y & Usami, K 2015, Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET. in EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon., 7063746, Institute of Electrical and Electronics Engineers Inc., pp. 193-196, 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015, Bologna, Italy, 15/1/26. https://doi.org/10.1109/ULIS.2015.7063746

Nakamura S, Kawasaki J, Kumagai Y, Usami K. Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET. In EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon. Institute of Electrical and Electronics Engineers Inc. 2015. p. 193-196. 7063746 doi: 10.1109/ULIS.2015.7063746

@inproceedings{675412787a7a4316be979ff87207fa61,

title = "Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET",

abstract = "This paper aims to measure the minimum energy point of logic circuits using SOTB and a bulk device, and to study the characteristics of logic circuits in SOTB at ultra-low voltage. We designed test chips including 32bit adder and 16bit multiplier circuits in 65nm SOTB and 65nm bulk devices. Measurement results revealed that the minimum energy of SOTB is about 39-49% smaller than that of the bulk The minimum energy voltage of SOTB is 0.25-0.3V, while that of the bulk is 0.35-0.45V. Measurement results also revealed that energy minimum voltage is proportional to the absolute temperature.",

keywords = "Energy minimum point, Silicon-on-Thin-BOX MOSFET, Ultra-low voltage",

author = "Shohei Nakamura and Jun Kawasaki and Yuichi Kumagai and Kimiyoshi Usami",

year = "2015",

month = mar,

day = "18",

doi = "10.1109/ULIS.2015.7063746",

language = "English",

isbn = "9781479969111",

pages = "193--196",

booktitle = "EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 ; Conference date: 26-01-2015 Through 28-01-2015",

}

TY - GEN

T1 - Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET

AU - Nakamura, Shohei

AU - Kawasaki, Jun

AU - Kumagai, Yuichi

AU - Usami, Kimiyoshi

PY - 2015/3/18

Y1 - 2015/3/18

N2 - This paper aims to measure the minimum energy point of logic circuits using SOTB and a bulk device, and to study the characteristics of logic circuits in SOTB at ultra-low voltage. We designed test chips including 32bit adder and 16bit multiplier circuits in 65nm SOTB and 65nm bulk devices. Measurement results revealed that the minimum energy of SOTB is about 39-49% smaller than that of the bulk The minimum energy voltage of SOTB is 0.25-0.3V, while that of the bulk is 0.35-0.45V. Measurement results also revealed that energy minimum voltage is proportional to the absolute temperature.

AB - This paper aims to measure the minimum energy point of logic circuits using SOTB and a bulk device, and to study the characteristics of logic circuits in SOTB at ultra-low voltage. We designed test chips including 32bit adder and 16bit multiplier circuits in 65nm SOTB and 65nm bulk devices. Measurement results revealed that the minimum energy of SOTB is about 39-49% smaller than that of the bulk The minimum energy voltage of SOTB is 0.25-0.3V, while that of the bulk is 0.35-0.45V. Measurement results also revealed that energy minimum voltage is proportional to the absolute temperature.

KW - Energy minimum point

KW - Silicon-on-Thin-BOX MOSFET

KW - Ultra-low voltage

UR - http://www.scopus.com/inward/record.url?scp=84926476950&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84926476950&partnerID=8YFLogxK

U2 - 10.1109/ULIS.2015.7063746

DO - 10.1109/ULIS.2015.7063746

M3 - Conference contribution

AN - SCOPUS:84926476950

SN - 9781479969111

SP - 193

EP - 196

BT - EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015

Y2 - 26 January 2015 through 28 January 2015

ER -

Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET

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Other

ASJC Scopus subject areas

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