Mechanical properties of the GaN thin films deposited on sapphire substrate

G. Yu, H. Ishikawa, T. Egawa, T. Soga, J. Watanabe, T. Jimbo, M. Umeno

研究成果: Article

47 引用 (Scopus)

抜粋

The surface deformation of undoped GaN epitaxial layer on sapphire(0 0 0 1) substrate has been studied by the nanoindentation of pointed diamond (Berkovich triangular pyramid) and spherically tipped diamond of 5 μm radius. We found a "pop-in" under the load portion of load-displacement curves for all the samples, and that average shear stress is dependent on the film thickness. We further calculated "true-hardness" of GaN on sapphire(0 0 0 1) substrate, and compared with the results of InGaN on sapphire.

元の言語English
ページ(範囲)701-705
ページ数5
ジャーナルJournal of Crystal Growth
189-190
DOI
出版物ステータスPublished - 1998 6 15

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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