Mechanism of Vfb shift in HfO 2 gate stack by Al diffusion from (TaC) 1-xAl x gate electrode

T. Nabatame, M. Kimura, H. Yamada, A. Ohi, T. Ohishi, T. Chikyow

研究成果: Conference contribution

抄録

We investigate Vfb behavior of (TaC) 1-xAl x gated HfO 2 MOS capacitors as a function of post metal annealing (PMA) temperature. The positive Vfb shift appears in PMA temperature at above 700°C, while the negative Vfb shift occurs at below 600°C. At below 600°C, the effective work function (φ m,eff) of gate electrode becomes lower by increasing Al atoms with a low work function. We found that the positive Vfb shift occurs dominantly due to the φ m,eff change induced by Al diffusion from gate electrode at 700 and 800°C. At above 900°C, Al atoms reach to the HfO 2/SiO 2 interface and form the AlO x layers, and results in positive Vfb shift due to the bottom interface dipole. We can divide into two components of φ m,eff change of gate electrode and the bottom interface dipole due to AlO x layer as a function of PMA temperature.

本文言語English
ホスト出版物のタイトルDielectrics for Nanosystems 5
ホスト出版物のサブタイトルMaterials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
ページ49-59
ページ数11
3
DOI
出版ステータスPublished - 2012 11 19
イベント5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States
継続期間: 2012 5 62012 5 10

出版物シリーズ

名前ECS Transactions
番号3
45
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Conference

Conference5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period12/5/612/5/10

ASJC Scopus subject areas

  • Engineering(all)

フィンガープリント 「Mechanism of Vfb shift in HfO <sub>2</sub> gate stack by Al diffusion from (TaC) <sub>1-x</sub>Al <sub>x</sub> gate electrode」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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