Mechanism of Vfb shift in HfO 2 gate stack by Al diffusion from (TaC) 1-xAl x gate electrode

T. Nabatame, M. Kimura, H. Yamada, A. Ohi, Tomoji Ohishi, T. Chikyow

研究成果: Conference contribution

抜粋

We investigate Vfb behavior of (TaC) 1-xAl x gated HfO 2 MOS capacitors as a function of post metal annealing (PMA) temperature. The positive Vfb shift appears in PMA temperature at above 700°C, while the negative Vfb shift occurs at below 600°C. At below 600°C, the effective work function (φ m,eff) of gate electrode becomes lower by increasing Al atoms with a low work function. We found that the positive Vfb shift occurs dominantly due to the φ m,eff change induced by Al diffusion from gate electrode at 700 and 800°C. At above 900°C, Al atoms reach to the HfO 2/SiO 2 interface and form the AlO x layers, and results in positive Vfb shift due to the bottom interface dipole. We can divide into two components of φ m,eff change of gate electrode and the bottom interface dipole due to AlO x layer as a function of PMA temperature.

元の言語English
ホスト出版物のタイトルECS Transactions
ページ49-59
ページ数11
45
エディション3
DOI
出版物ステータスPublished - 2012
イベント5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA
継続期間: 2012 5 62012 5 10

Other

Other5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
Seattle, WA
期間12/5/612/5/10

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ASJC Scopus subject areas

  • Engineering(all)

これを引用

Nabatame, T., Kimura, M., Yamada, H., Ohi, A., Ohishi, T., & Chikyow, T. (2012). Mechanism of Vfb shift in HfO 2 gate stack by Al diffusion from (TaC) 1-xAl x gate electrode. : ECS Transactions (3 版, 巻 45, pp. 49-59) https://doi.org/10.1149/1.3700871