Mechanisms of and solutions to moisture absorption of lanthanum oxide as high k gate dielectric

Yi Zhao, Koji Kita, Kentaro Kyuno, Akira Toriumi

研究成果: Conference contribution

8 被引用数 (Scopus)

抄録

Moisture absorption is a big problem of lanthanum oxide (La 2O3) as a high permittivity (k) gate dielectric which can degrade properties of La2O3 films. In this study, two possible mechanisms have been proposed. One is oxygen vacancies in La 2O3. The other is the intrinsic reaction between La 2O3 and H2O due to the small lattice energy of La2O3. To suppress these two reactions of H2O with La2O3, two solutions have been proposed respectively. One is the ultraviolet (UV) ozone post treatment to suppress the moisture absorption through healing the oxygen vacancies in La2O3 films. Our experiment results show that UV ozone treatment can suppress the moisture absorption of La2O3 film. The other solution is to dope a larger lattice energy oxide into La2O3 to suppress the intrinsic moisture absorption reaction. We have demonstrated experimentally that the Y2O3 doping (LaYOx) films show much stronger moisture resistance than La2O3 film.

本文言語English
ホスト出版物のタイトルECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS
ホスト出版物のサブタイトルNew Materials, Processes and Equipment, 3
ページ141-148
ページ数8
1
DOI
出版ステータスPublished - 2007 12 1
外部発表はい
イベントInternational Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting - Chicago, IL, United States
継続期間: 2007 5 62007 5 10

出版物シリーズ

名前ECS Transactions
番号1
6
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Conference

ConferenceInternational Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting
国/地域United States
CityChicago, IL
Period07/5/607/5/10

ASJC Scopus subject areas

  • 工学(全般)

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