Hollow-cathode oxygen plasma etching was proposed as a promising means to make micro-texturing into CVD diamond coatings. Oxygen ions and electrons were confined in the hollow-cathode to have higher ion and electron densities in the order of 1017 to 1018 m-3 in the inside of hollow-cathode. Quantitative plasma diagnosis proved that direct reaction of oxygen atom or radicals with carbon in the diamond coating should drive the reactive ion etching (RIE) process. A diamond-coated WC (Co) disc specimen was employed to describe the RIE-behavior with aid of stainless steel mask with the line width of 100 μm. Surface depth profile measurement as well as the Raman spectroscopy demonstrated that a micro-groove was precisely etched into the diamond film as a sharp-edged profile.
ASJC Scopus subject areas
- Mechanics of Materials
- Industrial and Manufacturing Engineering