Micro-pattering of siloxane films by proton beam writing

Hiroyuki Nishikawa; Ryutaro Tsuchiya; Tetsuro Yasukawa; Tomoki Kaneko; Yusuke Furuta; Tomoji Ohishi

doi:10.2494/photopolymer.22.239

Micro-pattering of siloxane films by proton beam writing

Hiroyuki Nishikawa, Ryutaro Tsuchiya, Tetsuro Yasukawa, Tomoki Kaneko, Yusuke Furuta, Tomoji Ohishi

研究成果: Article › 査読

6 被引用数 (Scopus)

抄録

Micropatterning of two types of siloxane films, HSQ and SOG was studied by 1.0 MeV focused proton beam. FT-IR measurements show the transformation of the Si-O-Si structures in siloxane to networked structures after proton beam writing. Both the HSQ and SOG are negative resist for 1.0 MeV proton beam. Lines with smooth sidewalls were written by proton beam writing for both HSQ and SOG. Vertical sidewall is observed for HSQ, while it is tapered for SOG.

本文言語	English
ページ（範囲）	239-243
ページ数	5
ジャーナル	Journal of Photopolymer Science and Technology
巻	22
号	2
DOI	https://doi.org/10.2494/photopolymer.22.239
出版ステータス	Published - 2009

ASJC Scopus subject areas

ポリマーおよびプラスチック
有機化学
材料化学

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10.2494/photopolymer.22.239

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title = "Micro-pattering of siloxane films by proton beam writing",

abstract = "Micropatterning of two types of siloxane films, HSQ and SOG was studied by 1.0 MeV focused proton beam. FT-IR measurements show the transformation of the Si-O-Si structures in siloxane to networked structures after proton beam writing. Both the HSQ and SOG are negative resist for 1.0 MeV proton beam. Lines with smooth sidewalls were written by proton beam writing for both HSQ and SOG. Vertical sidewall is observed for HSQ, while it is tapered for SOG.",

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author = "Hiroyuki Nishikawa and Ryutaro Tsuchiya and Tetsuro Yasukawa and Tomoki Kaneko and Yusuke Furuta and Tomoji Ohishi",

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T1 - Micro-pattering of siloxane films by proton beam writing

AU - Nishikawa, Hiroyuki

AU - Tsuchiya, Ryutaro

AU - Yasukawa, Tetsuro

AU - Kaneko, Tomoki

AU - Furuta, Yusuke

AU - Ohishi, Tomoji

PY - 2009

Y1 - 2009

N2 - Micropatterning of two types of siloxane films, HSQ and SOG was studied by 1.0 MeV focused proton beam. FT-IR measurements show the transformation of the Si-O-Si structures in siloxane to networked structures after proton beam writing. Both the HSQ and SOG are negative resist for 1.0 MeV proton beam. Lines with smooth sidewalls were written by proton beam writing for both HSQ and SOG. Vertical sidewall is observed for HSQ, while it is tapered for SOG.

AB - Micropatterning of two types of siloxane films, HSQ and SOG was studied by 1.0 MeV focused proton beam. FT-IR measurements show the transformation of the Si-O-Si structures in siloxane to networked structures after proton beam writing. Both the HSQ and SOG are negative resist for 1.0 MeV proton beam. Lines with smooth sidewalls were written by proton beam writing for both HSQ and SOG. Vertical sidewall is observed for HSQ, while it is tapered for SOG.

KW - HSQ

KW - Proton beam writing

KW - SOG

KW - Siloxane

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JO - Journal of Photopolymer Science and Technology

JF - Journal of Photopolymer Science and Technology

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Micro-pattering of siloxane films by proton beam writing

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