Micro three-dimensional removal processing inside sapphire substrate

Kensuke Tokumi, Shigeki Matsuo, Satoshi Kiyama, Takuro Tomita, Shuichi Hashimoto

研究成果: Article

抄録

Femtosecond laser-assisted etching is a promising technique as micro three-dimensional removal processing. This technique consists of two-steps: the first step is irradiation of focused femtosecond (fs) laser pulses along the pre-designed pattern, and next step is wet etching. Provided the modified region is etched faster than the un-modified host material, the modified region is selectively removed. However, when this technique was applied to volume etching of sapphire, there was a problem of incomplete removal (residues remain after etching). In the present report, we propose and demonstrate a new strategy of two-cycle process, i.e., repeating {irradiation-etching} cycle two-times. The region that should be removed was divided into two. Outer layer was etched at the first cycle and inner volume was etched at the second cycle. In this way, the etching capability was improved as well as suppressing undesirable side effects of cracks and surface pits.

元の言語English
ページ(範囲)179-182
ページ数4
ジャーナルJournal of Laser Micro Nanoengineering
5
発行部数2
DOI
出版物ステータスPublished - 2010 6
外部発表Yes

Fingerprint

Sapphire
Etching
sapphire
etching
Substrates
Processing
cycles
Ultrashort pulses
Irradiation
Wet etching
irradiation
lasers
Cracks
cracks
pulses

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering
  • Instrumentation
  • Electrical and Electronic Engineering

これを引用

Micro three-dimensional removal processing inside sapphire substrate. / Tokumi, Kensuke; Matsuo, Shigeki; Kiyama, Satoshi; Tomita, Takuro; Hashimoto, Shuichi.

:: Journal of Laser Micro Nanoengineering, 巻 5, 番号 2, 06.2010, p. 179-182.

研究成果: Article

Tokumi, Kensuke ; Matsuo, Shigeki ; Kiyama, Satoshi ; Tomita, Takuro ; Hashimoto, Shuichi. / Micro three-dimensional removal processing inside sapphire substrate. :: Journal of Laser Micro Nanoengineering. 2010 ; 巻 5, 番号 2. pp. 179-182.
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