抄録
Femtosecond laser-assisted etching is a promising technique as micro three-dimensional removal processing. This technique consists of two-steps: the first step is irradiation of focused femtosecond (fs) laser pulses along the pre-designed pattern, and next step is wet etching. Provided the modified region is etched faster than the un-modified host material, the modified region is selectively removed. However, when this technique was applied to volume etching of sapphire, there was a problem of incomplete removal (residues remain after etching). In the present report, we propose and demonstrate a new strategy of two-cycle process, i.e., repeating {irradiation-etching} cycle two-times. The region that should be removed was divided into two. Outer layer was etched at the first cycle and inner volume was etched at the second cycle. In this way, the etching capability was improved as well as suppressing undesirable side effects of cracks and surface pits.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 179-182 |
| ページ数 | 4 |
| ジャーナル | Journal of Laser Micro Nanoengineering |
| 巻 | 5 |
| 発行部数 | 2 |
| DOI | |
| 出版物ステータス | Published - 2010 6 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Industrial and Manufacturing Engineering
- Instrumentation
- Electrical and Electronic Engineering
これを引用
Micro three-dimensional removal processing inside sapphire substrate. / Tokumi, Kensuke; Matsuo, Shigeki; Kiyama, Satoshi; Tomita, Takuro; Hashimoto, Shuichi.
：: Journal of Laser Micro Nanoengineering, 巻 5, 番号 2, 06.2010, p. 179-182.研究成果: Article
}
TY - JOUR
T1 - Micro three-dimensional removal processing inside sapphire substrate
AU - Tokumi, Kensuke
AU - Matsuo, Shigeki
AU - Kiyama, Satoshi
AU - Tomita, Takuro
AU - Hashimoto, Shuichi
PY - 2010/6
Y1 - 2010/6
N2 - Femtosecond laser-assisted etching is a promising technique as micro three-dimensional removal processing. This technique consists of two-steps: the first step is irradiation of focused femtosecond (fs) laser pulses along the pre-designed pattern, and next step is wet etching. Provided the modified region is etched faster than the un-modified host material, the modified region is selectively removed. However, when this technique was applied to volume etching of sapphire, there was a problem of incomplete removal (residues remain after etching). In the present report, we propose and demonstrate a new strategy of two-cycle process, i.e., repeating {irradiation-etching} cycle two-times. The region that should be removed was divided into two. Outer layer was etched at the first cycle and inner volume was etched at the second cycle. In this way, the etching capability was improved as well as suppressing undesirable side effects of cracks and surface pits.
AB - Femtosecond laser-assisted etching is a promising technique as micro three-dimensional removal processing. This technique consists of two-steps: the first step is irradiation of focused femtosecond (fs) laser pulses along the pre-designed pattern, and next step is wet etching. Provided the modified region is etched faster than the un-modified host material, the modified region is selectively removed. However, when this technique was applied to volume etching of sapphire, there was a problem of incomplete removal (residues remain after etching). In the present report, we propose and demonstrate a new strategy of two-cycle process, i.e., repeating {irradiation-etching} cycle two-times. The region that should be removed was divided into two. Outer layer was etched at the first cycle and inner volume was etched at the second cycle. In this way, the etching capability was improved as well as suppressing undesirable side effects of cracks and surface pits.
KW - Femtosecond laser processing
KW - Femtosecond laser-assisted etching
KW - Sapphire
KW - Two-cycle process
UR - http://www.scopus.com/inward/record.url?scp=79956370122&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79956370122&partnerID=8YFLogxK
U2 - 10.2961/jlmn.2010.02.0015
DO - 10.2961/jlmn.2010.02.0015
M3 - Article
AN - SCOPUS:79956370122
VL - 5
SP - 179
EP - 182
JO - Journal of Laser Micro Nanoengineering
JF - Journal of Laser Micro Nanoengineering
SN - 1880-0688
IS - 2
ER -