抄録
This paper describes AlGaAs/InGaAs and AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) technologies applicable to power amplifiers for microwave and millimeter-wave frequencies. The performance of the power amplifier is characterized using power added efficiency, which is the function of maximum available gain cutoff frequency (fmax), and collector efficiency. HBT device structure having p+/p regrown extrinsic base, compositionally graded intrinsic base, and hetero guard ring composed of depleted AlGaAs, are shown as technologies to improve fmax. Novel class F matching circuit including harmonic trapping are also shown as a technology to increase collector efficiency. RF power performances of 25.6 dBm (365 mW) saturation power and 23% power added efficiency were obtained at 25.2 GHz.
本文言語 | English |
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ホスト出版物のタイトル | NEC Research and Development |
ページ | 139-146 |
ページ数 | 8 |
巻 | 36 |
版 | 1 |
出版ステータス | Published - 1995 1月 1 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学