抄録
This paper describes AlGaAs/InGaAs and AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) technologies applicable to power amplifiers for microwave and millimeter-wave frequencies. The performance of the power amplifier is characterized using power added efficiency, which is the function of maximum available gain cutoff frequency (f max), and collector efficiency. HBT device structure having p +/p regrown extrinsic base, compositionally graded intrinsic base, and hetero guard ring composed of depleted AlGaAs, are shown as technologies to improve f max. Novel class F matching circuit including harmonic trapping are also shown as a technology to increase collector efficiency. RF power performances of 25.6 dBm (365 mW) saturation power and 23% power added efficiency were obtained at 25.2 GHz.
| 元の言語 | English |
|---|---|
| ホスト出版物のタイトル | NEC Research and Development |
| ページ | 139-146 |
| ページ数 | 8 |
| 巻 | 36 |
| エディション | 1 |
| 出版物ステータス | Published - 1995 1 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
これを引用
Microwave and millimeter-wave high efficiency power HBT. / Goto, Norio; Shimawaki, Hidenori; Amamiya, Yasushi; Furuhata, Naoki; Kim, Chang Woo; Tanaka, Shinichi; Honjo, Kazuhiko.
NEC Research and Development. 巻 36 1. 編 1995. p. 139-146.研究成果: Chapter
}
TY - CHAP
T1 - Microwave and millimeter-wave high efficiency power HBT
AU - Goto, Norio
AU - Shimawaki, Hidenori
AU - Amamiya, Yasushi
AU - Furuhata, Naoki
AU - Kim, Chang Woo
AU - Tanaka, Shinichi
AU - Honjo, Kazuhiko
PY - 1995/1
Y1 - 1995/1
N2 - This paper describes AlGaAs/InGaAs and AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) technologies applicable to power amplifiers for microwave and millimeter-wave frequencies. The performance of the power amplifier is characterized using power added efficiency, which is the function of maximum available gain cutoff frequency (f max), and collector efficiency. HBT device structure having p +/p regrown extrinsic base, compositionally graded intrinsic base, and hetero guard ring composed of depleted AlGaAs, are shown as technologies to improve f max. Novel class F matching circuit including harmonic trapping are also shown as a technology to increase collector efficiency. RF power performances of 25.6 dBm (365 mW) saturation power and 23% power added efficiency were obtained at 25.2 GHz.
AB - This paper describes AlGaAs/InGaAs and AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) technologies applicable to power amplifiers for microwave and millimeter-wave frequencies. The performance of the power amplifier is characterized using power added efficiency, which is the function of maximum available gain cutoff frequency (f max), and collector efficiency. HBT device structure having p +/p regrown extrinsic base, compositionally graded intrinsic base, and hetero guard ring composed of depleted AlGaAs, are shown as technologies to improve f max. Novel class F matching circuit including harmonic trapping are also shown as a technology to increase collector efficiency. RF power performances of 25.6 dBm (365 mW) saturation power and 23% power added efficiency were obtained at 25.2 GHz.
UR - http://www.scopus.com/inward/record.url?scp=0029217015&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029217015&partnerID=8YFLogxK
M3 - Chapter
AN - SCOPUS:0029217015
VL - 36
SP - 139
EP - 146
BT - NEC Research and Development
ER -