Microwave and millimeter-wave high efficiency power HBT

Norio Goto, Hidenori Shimawaki, Yasushi Amamiya, Naoki Furuhata, Chang Woo Kim, Shin'ichi Tanaka, Kazuhiko Honjo

研究成果: Chapter

抜粋

This paper describes AlGaAs/InGaAs and AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) technologies applicable to power amplifiers for microwave and millimeter-wave frequencies. The performance of the power amplifier is characterized using power added efficiency, which is the function of maximum available gain cutoff frequency (fmax), and collector efficiency. HBT device structure having p+/p regrown extrinsic base, compositionally graded intrinsic base, and hetero guard ring composed of depleted AlGaAs, are shown as technologies to improve fmax. Novel class F matching circuit including harmonic trapping are also shown as a technology to increase collector efficiency. RF power performances of 25.6 dBm (365 mW) saturation power and 23% power added efficiency were obtained at 25.2 GHz.

元の言語English
ホスト出版物のタイトルNEC Research and Development
ページ139-146
ページ数8
36
エディション1
出版物ステータスPublished - 1995 1 1
外部発表Yes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • これを引用

    Goto, N., Shimawaki, H., Amamiya, Y., Furuhata, N., Kim, C. W., Tanaka, S., & Honjo, K. (1995). Microwave and millimeter-wave high efficiency power HBT. : NEC Research and Development (1 版, 巻 36, pp. 139-146)