Microwave and millimeter-wave high efficiency power HBT

Norio Goto; Hidenori Shimawaki; Yasushi Amamiya; Naoki Furuhata; Chang Woo Kim; Shin'ichi Tanaka; Kazuhiko Honjo

Microwave and millimeter-wave high efficiency power HBT

Norio Goto, Hidenori Shimawaki, Yasushi Amamiya, Naoki Furuhata, Chang Woo Kim, Shin'ichi Tanaka, Kazuhiko Honjo

研究成果: Chapter

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This paper describes AlGaAs/InGaAs and AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) technologies applicable to power amplifiers for microwave and millimeter-wave frequencies. The performance of the power amplifier is characterized using power added efficiency, which is the function of maximum available gain cutoff frequency (f_max), and collector efficiency. HBT device structure having p⁺/p regrown extrinsic base, compositionally graded intrinsic base, and hetero guard ring composed of depleted AlGaAs, are shown as technologies to improve f_max. Novel class F matching circuit including harmonic trapping are also shown as a technology to increase collector efficiency. RF power performances of 25.6 dBm (365 mW) saturation power and 23% power added efficiency were obtained at 25.2 GHz.

本文言語	English
ホスト出版物のタイトル	NEC Research and Development
ページ	139-146
ページ数	8
巻	36
版	1
出版ステータス	Published - 1995 1月 1
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

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abstract = "This paper describes AlGaAs/InGaAs and AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) technologies applicable to power amplifiers for microwave and millimeter-wave frequencies. The performance of the power amplifier is characterized using power added efficiency, which is the function of maximum available gain cutoff frequency (fmax), and collector efficiency. HBT device structure having p+/p regrown extrinsic base, compositionally graded intrinsic base, and hetero guard ring composed of depleted AlGaAs, are shown as technologies to improve fmax. Novel class F matching circuit including harmonic trapping are also shown as a technology to increase collector efficiency. RF power performances of 25.6 dBm (365 mW) saturation power and 23% power added efficiency were obtained at 25.2 GHz.",

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AU - Goto, Norio

AU - Shimawaki, Hidenori

AU - Amamiya, Yasushi

AU - Furuhata, Naoki

AU - Kim, Chang Woo

AU - Tanaka, Shin'ichi

AU - Honjo, Kazuhiko

PY - 1995/1/1

Y1 - 1995/1/1

N2 - This paper describes AlGaAs/InGaAs and AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) technologies applicable to power amplifiers for microwave and millimeter-wave frequencies. The performance of the power amplifier is characterized using power added efficiency, which is the function of maximum available gain cutoff frequency (fmax), and collector efficiency. HBT device structure having p+/p regrown extrinsic base, compositionally graded intrinsic base, and hetero guard ring composed of depleted AlGaAs, are shown as technologies to improve fmax. Novel class F matching circuit including harmonic trapping are also shown as a technology to increase collector efficiency. RF power performances of 25.6 dBm (365 mW) saturation power and 23% power added efficiency were obtained at 25.2 GHz.

AB - This paper describes AlGaAs/InGaAs and AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) technologies applicable to power amplifiers for microwave and millimeter-wave frequencies. The performance of the power amplifier is characterized using power added efficiency, which is the function of maximum available gain cutoff frequency (fmax), and collector efficiency. HBT device structure having p+/p regrown extrinsic base, compositionally graded intrinsic base, and hetero guard ring composed of depleted AlGaAs, are shown as technologies to improve fmax. Novel class F matching circuit including harmonic trapping are also shown as a technology to increase collector efficiency. RF power performances of 25.6 dBm (365 mW) saturation power and 23% power added efficiency were obtained at 25.2 GHz.

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Microwave and millimeter-wave high efficiency power HBT

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