A novel microwave dielectric ceramics Bi(Sc1/3Mo2/3)O4 with low firing temperature were prepared via the solid reaction method. The specimens have been characterized using scanning electron microscopy, X-ray diffraction, Raman spectroscopy and DC conductivity. The Bi(Sc1/3Mo2/3)O4 ceramics showed B-site ordered Scheelite-type structure with space group C2/c. Raman analysis indicated that prominent bands were attributed to the normal modes of vibration of MoO4 2− tetrahedra. The dielectric loss of Bi(Sc1/3Mo2/3)O4 ceramics can be depended strongly the bulk conductivity by DC measurement. The superior microwave dielectric properties are achieved in the Bi(Sc1/3Mo2/3)O4 ceramic sintered at 875 °C/4 h, with dielectric constant ~ 25, Q × f ~ 51,716 GHz at 6.4522 GHz and temperature coefficient of resonance frequency ~ − 70.4 ppm/°C. It is a promising microwave dielectric material for low-temperature co-fired ceramics technology.
|ジャーナル||Journal of Materials Science: Materials in Electronics|
|出版ステータス||Published - 2018 2月 1|
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