Microwave low-noise GaAs HBTs

H. Dodo, Y. Amamiya, T. Niwa, M. Mamada, S. Tanaka, H. Shimawaki


8 被引用数 (Scopus)


In this paper we present our approach to improving microwave noise performance of HBTs. A minimum noise figure of 0.83 dB was obtained at 2 GHz by using an emitter guarding structure which improves the DC current gain particularly at low current densities. We also fabricated HBTs with regrown extrinsic base layers and InGaAs graded base layers which drastically reduce base contact resistance and base transit time, respectively. It is shown that this type of HBTs not only improve the noise-figure at X-band or Ku-band but also make the noise impedance matching easier.

ジャーナルIEEE MTT-S International Microwave Symposium Digest
出版ステータスPublished - 1998 1 1
イベントProceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Baltimore, MD, USA
継続期間: 1998 6 71998 6 12

ASJC Scopus subject areas

  • 放射線
  • 凝縮系物理学
  • 電子工学および電気工学


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