Microwave low-noise GaAs HBTs

H. Dodo, Y. Amamiya, T. Niwa, M. Mamada, S. Tanaka, H. Shimawaki

研究成果: Conference article

8 引用 (Scopus)

抜粋

In this paper we present our approach to improving microwave noise performance of HBTs. A minimum noise figure of 0.83 dB was obtained at 2 GHz by using an emitter guarding structure which improves the DC current gain particularly at low current densities. We also fabricated HBTs with regrown extrinsic base layers and InGaAs graded base layers which drastically reduce base contact resistance and base transit time, respectively. It is shown that this type of HBTs not only improve the noise-figure at X-band or Ku-band but also make the noise impedance matching easier.

元の言語English
ページ(範囲)693-696
ページ数4
ジャーナルIEEE MTT-S International Microwave Symposium Digest
2
出版物ステータスPublished - 1998 1 1
イベントProceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Baltimore, MD, USA
継続期間: 1998 6 71998 6 12

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • これを引用

    Dodo, H., Amamiya, Y., Niwa, T., Mamada, M., Tanaka, S., & Shimawaki, H. (1998). Microwave low-noise GaAs HBTs. IEEE MTT-S International Microwave Symposium Digest, 2, 693-696.