MOCVD growth of GaN on porous silicon substrates

Hiroyasu Ishikawa, Keita Shimanaka, Fumiyuki Tokura, Yasuhiko Hayashi, Yosuke Hara, Masami Nakanishi

研究成果: Article

24 引用 (Scopus)

抜粋

Single-crystal GaN thin films were successfully grown on porous Si (PSi) substrates using metalorganic chemical vapor deposition. The full-width at half-maximum (FWHM) of the asymmetric rocking curve for a GaN film on a PSi substrate was narrower than that for a GaN film on a normal flat-Si substrate (Flat-Si), whereas the FWHM of the symmetric one is broader. Compared with a GaN film on Flat-Si, the extent of wafer bending was reduced and the band-edge emission from GaN was enhanced. Moreover, the tensile stress in the film was significantly reduced.

元の言語English
ページ(範囲)4900-4903
ページ数4
ジャーナルJournal of Crystal Growth
310
発行部数23
DOI
出版物ステータスPublished - 2008 11 15

    フィンガープリント

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

これを引用

Ishikawa, H., Shimanaka, K., Tokura, F., Hayashi, Y., Hara, Y., & Nakanishi, M. (2008). MOCVD growth of GaN on porous silicon substrates. Journal of Crystal Growth, 310(23), 4900-4903. https://doi.org/10.1016/j.jcrysgro.2008.08.030