MOCVD growth of GaN on porous silicon substrates

Hiroyasu Ishikawa, Keita Shimanaka, Fumiyuki Tokura, Yasuhiko Hayashi, Yosuke Hara, Masami Nakanishi

研究成果: Article査読

27 被引用数 (Scopus)

抄録

Single-crystal GaN thin films were successfully grown on porous Si (PSi) substrates using metalorganic chemical vapor deposition. The full-width at half-maximum (FWHM) of the asymmetric rocking curve for a GaN film on a PSi substrate was narrower than that for a GaN film on a normal flat-Si substrate (Flat-Si), whereas the FWHM of the symmetric one is broader. Compared with a GaN film on Flat-Si, the extent of wafer bending was reduced and the band-edge emission from GaN was enhanced. Moreover, the tensile stress in the film was significantly reduced.

本文言語English
ページ(範囲)4900-4903
ページ数4
ジャーナルJournal of Crystal Growth
310
23
DOI
出版ステータスPublished - 2008 11月 15
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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