Morphology of Ge thin films crystallized by Au-induced layer exchange at low temperature (220 °c)

Narin Sunthornpan, Kenjiro Kimura, Kentaro Kyuno

研究成果: Article査読

抄録

The influence of the original amorphous Ge (a-Ge) layer thickness on the crystallization behavior by Au-induced crystallization at low temperature (220 °C) is studied. Initially, the coverage of the crystalline Ge (c-Ge) layer increases as the a-Ge layer thickness increases. A further increase in a-Ge layer thickness, however, results in the decrease of the coverage and appearance of the second Ge layer on top of the first layer, which results in the increase of surface roughness. The bottom c-Ge layer has a better crystal quality compared to the top layer. The maximum coverage of ∼97% with only a small amount of second layer is obtained by annealing an a-Ge(46 nm)/Au(29 nm) bilayer and a Hall effect hole mobility of as high as ∼85 cm2/V s is achieved.

本文言語English
論文番号030601
ジャーナルJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
40
3
DOI
出版ステータスPublished - 2022 5月 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 器械工学
  • プロセス化学およびプロセス工学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学
  • 材料化学

フィンガープリント

「Morphology of Ge thin films crystallized by Au-induced layer exchange at low temperature (220 °c)」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル