MOVPE growth and characterization of high-Al-content AlGaN/GaN heterostructures on 100-mm-diameter sapphire substrates

Makoto Miyoshi, Masahiro Sakai, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Mitsuhiro Tanaka, Osamu Oda

研究成果: Article

23 引用 (Scopus)

抜粋

We optimized the growth conditions of AlGaN layers using a large-size horizontal metalorganic vapor-phase epitaxy (MOVPE) system, and different-Al-content AlxGa1-xN/GaN heterostructures (0.26 ≤ x ≤ 0.70) were successfully grown on 100-mm-diameter sapphire substrates. It was confirmed that a good in-wafer uniformity of the alloy composition, within ±3%, was obtained even for the sample with the highest Al content of 0.70 and that no relaxation in the AlGaN layers occurred for all samples. A minimum sheet resistance of approximately 380Ω/sq (sheet carrier concentration = 1.76 × 1013/cm2) with good in-wafer uniformity was obtained for the sample with the Al content of 0.52.

元の言語English
ページ(範囲)293-299
ページ数7
ジャーナルJournal of Crystal Growth
272
発行部数1-4 SPEC. ISS.
DOI
出版物ステータスPublished - 2004 12 10
外部発表Yes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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