抄録
We optimized the growth conditions of AlGaN layers using a large-size horizontal metalorganic vapor-phase epitaxy (MOVPE) system, and different-Al-content AlxGa1-xN/GaN heterostructures (0.26 ≤ x ≤ 0.70) were successfully grown on 100-mm-diameter sapphire substrates. It was confirmed that a good in-wafer uniformity of the alloy composition, within ±3%, was obtained even for the sample with the highest Al content of 0.70 and that no relaxation in the AlGaN layers occurred for all samples. A minimum sheet resistance of approximately 380Ω/sq (sheet carrier concentration = 1.76 × 1013/cm2) with good in-wafer uniformity was obtained for the sample with the Al content of 0.52.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 293-299 |
| ページ数 | 7 |
| ジャーナル | Journal of Crystal Growth |
| 巻 | 272 |
| 発行部数 | 1-4 SPEC. ISS. |
| DOI | |
| 出版物ステータス | Published - 2004 12 10 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
これを引用
MOVPE growth and characterization of high-Al-content AlGaN/GaN heterostructures on 100-mm-diameter sapphire substrates. / Miyoshi, Makoto; Sakai, Masahiro; Ishikawa, Hiroyasu; Egawa, Takashi; Jimbo, Takashi; Tanaka, Mitsuhiro; Oda, Osamu.
：: Journal of Crystal Growth, 巻 272, 番号 1-4 SPEC. ISS., 10.12.2004, p. 293-299.研究成果: Article
}
TY - JOUR
T1 - MOVPE growth and characterization of high-Al-content AlGaN/GaN heterostructures on 100-mm-diameter sapphire substrates
AU - Miyoshi, Makoto
AU - Sakai, Masahiro
AU - Ishikawa, Hiroyasu
AU - Egawa, Takashi
AU - Jimbo, Takashi
AU - Tanaka, Mitsuhiro
AU - Oda, Osamu
PY - 2004/12/10
Y1 - 2004/12/10
N2 - We optimized the growth conditions of AlGaN layers using a large-size horizontal metalorganic vapor-phase epitaxy (MOVPE) system, and different-Al-content AlxGa1-xN/GaN heterostructures (0.26 ≤ x ≤ 0.70) were successfully grown on 100-mm-diameter sapphire substrates. It was confirmed that a good in-wafer uniformity of the alloy composition, within ±3%, was obtained even for the sample with the highest Al content of 0.70 and that no relaxation in the AlGaN layers occurred for all samples. A minimum sheet resistance of approximately 380Ω/sq (sheet carrier concentration = 1.76 × 1013/cm2) with good in-wafer uniformity was obtained for the sample with the Al content of 0.52.
AB - We optimized the growth conditions of AlGaN layers using a large-size horizontal metalorganic vapor-phase epitaxy (MOVPE) system, and different-Al-content AlxGa1-xN/GaN heterostructures (0.26 ≤ x ≤ 0.70) were successfully grown on 100-mm-diameter sapphire substrates. It was confirmed that a good in-wafer uniformity of the alloy composition, within ±3%, was obtained even for the sample with the highest Al content of 0.70 and that no relaxation in the AlGaN layers occurred for all samples. A minimum sheet resistance of approximately 380Ω/sq (sheet carrier concentration = 1.76 × 1013/cm2) with good in-wafer uniformity was obtained for the sample with the Al content of 0.52.
KW - A1. Characterization
KW - A3. Metalorganic vapor-phase epitaxy
KW - B1. Nitrides
KW - B2. Semiconducting III-V materials
UR - http://www.scopus.com/inward/record.url?scp=9944226614&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=9944226614&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2004.08.117
DO - 10.1016/j.jcrysgro.2004.08.117
M3 - Article
AN - SCOPUS:9944226614
VL - 272
SP - 293
EP - 299
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4 SPEC. ISS.
ER -