抜粋
We optimized the growth conditions of AlGaN layers using a large-size horizontal metalorganic vapor-phase epitaxy (MOVPE) system, and different-Al-content AlxGa1-xN/GaN heterostructures (0.26 ≤ x ≤ 0.70) were successfully grown on 100-mm-diameter sapphire substrates. It was confirmed that a good in-wafer uniformity of the alloy composition, within ±3%, was obtained even for the sample with the highest Al content of 0.70 and that no relaxation in the AlGaN layers occurred for all samples. A minimum sheet resistance of approximately 380Ω/sq (sheet carrier concentration = 1.76 × 1013/cm2) with good in-wafer uniformity was obtained for the sample with the Al content of 0.52.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 293-299 |
| ページ数 | 7 |
| ジャーナル | Journal of Crystal Growth |
| 巻 | 272 |
| 発行部数 | 1-4 SPEC. ISS. |
| DOI | |
| 出版物ステータス | Published - 2004 12 10 |
| 外部発表 | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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これを引用
Miyoshi, M., Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Tanaka, M., & Oda, O. (2004). MOVPE growth and characterization of high-Al-content AlGaN/GaN heterostructures on 100-mm-diameter sapphire substrates. Journal of Crystal Growth, 272(1-4 SPEC. ISS.), 293-299. https://doi.org/10.1016/j.jcrysgro.2004.08.117