Multilevel gold (Au) metallization was realized for high-speed VLSI devices by a novel combination of selective tungsten CVD (W-CVD) with electroplated Au and a polyimide siloxane (PSI) film developed by the authors. Selective W-CVD was applied to overcome the problem of poor adhesion between Au wiring and PSI film as well as to fill vias. Silane (SiH4) reduced selective W-CVD application to Au wiring and an organic dielectric film (PSI) for VLSI devices have been demonstrated for the first time.
|出版ステータス||Published - 1989 12月 1|
|イベント||Sixth International VLSI Multilevel Interconnection Conference - Santa Clara, CA, USA|
継続期間: 1989 6月 12 → 1989 6月 13
|Other||Sixth International VLSI Multilevel Interconnection Conference|
|City||Santa Clara, CA, USA|
|Period||89/6/12 → 89/6/13|
ASJC Scopus subject areas