抄録
Multilevel gold (Au) metallization was realized for high-speed VLSI devices by a novel combination of selective tungsten CVD (W-CVD) with electroplated Au and a polyimide siloxane (PSI) film developed by the authors. Selective W-CVD was applied to overcome the problem of poor adhesion between Au wiring and PSI film as well as to fill vias. Silane (SiH4) reduced selective W-CVD application to Au wiring and an organic dielectric film (PSI) for VLSI devices have been demonstrated for the first time.
本文言語 | English |
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ページ | 33-39 |
ページ数 | 7 |
出版ステータス | Published - 1989 12月 1 |
外部発表 | はい |
イベント | Sixth International VLSI Multilevel Interconnection Conference - Santa Clara, CA, USA 継続期間: 1989 6月 12 → 1989 6月 13 |
Other
Other | Sixth International VLSI Multilevel Interconnection Conference |
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City | Santa Clara, CA, USA |
Period | 89/6/12 → 89/6/13 |
ASJC Scopus subject areas
- 工学(全般)