Multilevel gold metallization by use of selective W-CVD and polyimide siloxane film

K. Mikagi, T. Homma, T. Katoh, K. Tsunenari, Y. Murao

研究成果: Paper査読

4 被引用数 (Scopus)

抄録

Multilevel gold (Au) metallization was realized for high-speed VLSI devices by a novel combination of selective tungsten CVD (W-CVD) with electroplated Au and a polyimide siloxane (PSI) film developed by the authors. Selective W-CVD was applied to overcome the problem of poor adhesion between Au wiring and PSI film as well as to fill vias. Silane (SiH4) reduced selective W-CVD application to Au wiring and an organic dielectric film (PSI) for VLSI devices have been demonstrated for the first time.

本文言語English
ページ33-39
ページ数7
出版ステータスPublished - 1989 12 1
外部発表はい
イベントSixth International VLSI Multilevel Interconnection Conference - Santa Clara, CA, USA
継続期間: 1989 6 121989 6 13

Other

OtherSixth International VLSI Multilevel Interconnection Conference
CitySanta Clara, CA, USA
Period89/6/1289/6/13

ASJC Scopus subject areas

  • 工学(全般)

フィンガープリント

「Multilevel gold metallization by use of selective W-CVD and polyimide siloxane film」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル