Multilevel gold metallization by use of selective W-CVD and polyimide siloxane film

K. Mikagi; T. Homma; T. Katoh; K. Tsunenari; Y. Murao

Multilevel gold metallization by use of selective W-CVD and polyimide siloxane film

K. Mikagi, T. Homma, T. Katoh, K. Tsunenari, Y. Murao

研究成果: Paper › 査読

抄録

Multilevel gold (Au) metallization was realized for high-speed VLSI devices by a novel combination of selective tungsten CVD (W-CVD) with electroplated Au and a polyimide siloxane (PSI) film developed by the authors. Selective W-CVD was applied to overcome the problem of poor adhesion between Au wiring and PSI film as well as to fill vias. Silane (SiH₄) reduced selective W-CVD application to Au wiring and an organic dielectric film (PSI) for VLSI devices have been demonstrated for the first time.

本文言語	English
ページ	33-39
ページ数	7
出版ステータス	Published - 1989 12月 1
外部発表	はい
イベント	Sixth International VLSI Multilevel Interconnection Conference - Santa Clara, CA, USA 継続期間: 1989 6月 12 → 1989 6月 13

Other

Other	Sixth International VLSI Multilevel Interconnection Conference
City	Santa Clara, CA, USA
Period	89/6/12 → 89/6/13

ASJC Scopus subject areas

工学（全般）

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引用スタイル

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year = "1989",

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T1 - Multilevel gold metallization by use of selective W-CVD and polyimide siloxane film

AU - Mikagi, K.

AU - Homma, T.

AU - Katoh, T.

AU - Tsunenari, K.

AU - Murao, Y.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - Multilevel gold (Au) metallization was realized for high-speed VLSI devices by a novel combination of selective tungsten CVD (W-CVD) with electroplated Au and a polyimide siloxane (PSI) film developed by the authors. Selective W-CVD was applied to overcome the problem of poor adhesion between Au wiring and PSI film as well as to fill vias. Silane (SiH4) reduced selective W-CVD application to Au wiring and an organic dielectric film (PSI) for VLSI devices have been demonstrated for the first time.

AB - Multilevel gold (Au) metallization was realized for high-speed VLSI devices by a novel combination of selective tungsten CVD (W-CVD) with electroplated Au and a polyimide siloxane (PSI) film developed by the authors. Selective W-CVD was applied to overcome the problem of poor adhesion between Au wiring and PSI film as well as to fill vias. Silane (SiH4) reduced selective W-CVD application to Au wiring and an organic dielectric film (PSI) for VLSI devices have been demonstrated for the first time.

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T2 - Sixth International VLSI Multilevel Interconnection Conference

Y2 - 12 June 1989 through 13 June 1989

ER -

Multilevel gold metallization by use of selective W-CVD and polyimide siloxane film

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Other

ASJC Scopus subject areas

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