Multilevel planarized-trench-aluminum (PTA) interconnection using reflow sputtering and chemical mechanical polishing

K. Kikuta, T. Nakajima, K. Ueno, T. Kikkawa

研究成果: Conference contribution

11 引用 (Scopus)

抜粋

A multilevel planarized-trench-aluminum (PTA) interconnection is developed using reflow sputtering and chemical mechanical polishing (CMP). This new PTA interconnection technology has the advantages both for a simple process using only Al reflow sputtering for simultaneous via and trench filling and subsequent CMP [1], and for high reliability in the interconnection due to the use of reflow sputtering. A double-level PTA interconnection demonstrates 4 times lower via resistance and 9 times longer electromigration lifetimes in both wiring and vias than conventional interconnections.

元の言語English
ホスト出版物のタイトルTechnical Digest - International Electron Devices Meeting
編集者 Anon
出版者Publ by IEEE
ページ285-288
ページ数4
ISBN(印刷物)0780314506
出版物ステータスPublished - 1993 12 1
イベントProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
継続期間: 1993 12 51993 12 8

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting
ISSN(印刷物)0163-1918

Other

OtherProceedings of the 1993 IEEE International Electron Devices Meeting
Washington, DC, USA
期間93/12/593/12/8

    フィンガープリント

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

これを引用

Kikuta, K., Nakajima, T., Ueno, K., & Kikkawa, T. (1993). Multilevel planarized-trench-aluminum (PTA) interconnection using reflow sputtering and chemical mechanical polishing. : Anon (版), Technical Digest - International Electron Devices Meeting (pp. 285-288). (Technical Digest - International Electron Devices Meeting). Publ by IEEE.