Nanostructural characterization and two-dimensional electron-gas properties in high-mobility AlGaN/AlN/GaN heterostructures grown on epitaxial AlN/sapphire templates

Makoto Miyoshi, Takashi Egawa, Hiroyasu Ishikawa, Kei Ichiro Asai, Tomohiko Shibata, Mitsuhiro Tanaka, Osamu Oda

研究成果: Article査読

35 被引用数 (Scopus)

抄録

Al0.26 Ga0.74 NAlNGaN heterostructures with a 1 nm -thick AlN interfacial layer were grown on epitaxial AlN/sapphire templates by metal-organic vapor phase epitaxy, and they exhibited excellent film qualities and very high electron mobilities, such as over 2100 cm2 V s at room temperature and over 25 000 cm2 V s at 15 K with a two-dimensional electron-gas (2DEG) density of approximately 1× 1013 cm2. Cross-sectional transmission electron microscopy images revealed that the thin AlN layer with a thickness of 1 nm is continuously grown between AlGaN and GaN layers with atomically abrupt and flat interfaces. The experimental and calculated results for 2DEG transport properties indicated that an AlN interfacial layer between AlGaN and GaN layers effectively suppresses alloy disorder scattering and that epitaxial AlN/sapphire templates largely contribute to the high electron mobility because they allow for the realization of a high-quality GaN channel with a low dislocation density and a smooth interface.

本文言語English
論文番号063713
ジャーナルJournal of Applied Physics
98
6
DOI
出版ステータスPublished - 2005 9月 15
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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