Near-ideal Schottky contact on quaternary AlInGaN epilayer lattice-matched with GaN

Y. Liu; T. Egawa; H. Jiang; B. Zhang; H. Ishikawa; M. Hao

doi:10.1063/1.1834729

Near-ideal Schottky contact on quaternary AlInGaN epilayer lattice-matched with GaN

Y. Liu, T. Egawa, H. Jiang, B. Zhang, H. Ishikawa, M. Hao

研究成果: Article › 査読

13 被引用数 (Scopus)

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PdTiAu and NiAu Schottky barrier diodes (SBDs) were demonstrated on quaternary AlInGaN. Current-voltage properties indicated that near-ideal and high-performance SBDs had been realized with ideality factor of 1.05, 1.07 and barrier height of 1.32, 0.98 eV for Pd and Ni SBDs, respectively. Capacitance-voltage measurement revealed that the high-density two-dimensional electron gas (2DEG) located at the AlInGaNGaN interface. Ruling out the possible contribution from piezoelectric polarization and conduction band offset, we believe that the formation of 2DEG is due to the existence of large spontaneous polarization in AlInGaN layer, which experimentally verifies the feasible application of quaternary AlInGaN in the high-electron-mobility transistor.

本文言語	English
ページ（範囲）	6030-6032
ページ数	3
ジャーナル	Applied Physics Letters
巻	85
号	24
DOI	https://doi.org/10.1063/1.1834729
出版ステータス	Published - 2004 12月 13
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.1834729

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title = "Near-ideal Schottky contact on quaternary AlInGaN epilayer lattice-matched with GaN",

abstract = "PdTiAu and NiAu Schottky barrier diodes (SBDs) were demonstrated on quaternary AlInGaN. Current-voltage properties indicated that near-ideal and high-performance SBDs had been realized with ideality factor of 1.05, 1.07 and barrier height of 1.32, 0.98 eV for Pd and Ni SBDs, respectively. Capacitance-voltage measurement revealed that the high-density two-dimensional electron gas (2DEG) located at the AlInGaNGaN interface. Ruling out the possible contribution from piezoelectric polarization and conduction band offset, we believe that the formation of 2DEG is due to the existence of large spontaneous polarization in AlInGaN layer, which experimentally verifies the feasible application of quaternary AlInGaN in the high-electron-mobility transistor.",

author = "Y. Liu and T. Egawa and H. Jiang and B. Zhang and H. Ishikawa and M. Hao",

note = "Funding Information: Y.L. is grateful to JSPS for the award of a postdoctoral fellowship (ID. #P02329). He also would like to extend his thanks to Dr. S. Arulkumaran and Professor C. Shao for their kind help and helpful discussion. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

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AU - Liu, Y.

AU - Egawa, T.

AU - Jiang, H.

AU - Zhang, B.

AU - Ishikawa, H.

AU - Hao, M.

N1 - Funding Information: Y.L. is grateful to JSPS for the award of a postdoctoral fellowship (ID. #P02329). He also would like to extend his thanks to Dr. S. Arulkumaran and Professor C. Shao for their kind help and helpful discussion. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2004/12/13

Y1 - 2004/12/13

N2 - PdTiAu and NiAu Schottky barrier diodes (SBDs) were demonstrated on quaternary AlInGaN. Current-voltage properties indicated that near-ideal and high-performance SBDs had been realized with ideality factor of 1.05, 1.07 and barrier height of 1.32, 0.98 eV for Pd and Ni SBDs, respectively. Capacitance-voltage measurement revealed that the high-density two-dimensional electron gas (2DEG) located at the AlInGaNGaN interface. Ruling out the possible contribution from piezoelectric polarization and conduction band offset, we believe that the formation of 2DEG is due to the existence of large spontaneous polarization in AlInGaN layer, which experimentally verifies the feasible application of quaternary AlInGaN in the high-electron-mobility transistor.

AB - PdTiAu and NiAu Schottky barrier diodes (SBDs) were demonstrated on quaternary AlInGaN. Current-voltage properties indicated that near-ideal and high-performance SBDs had been realized with ideality factor of 1.05, 1.07 and barrier height of 1.32, 0.98 eV for Pd and Ni SBDs, respectively. Capacitance-voltage measurement revealed that the high-density two-dimensional electron gas (2DEG) located at the AlInGaNGaN interface. Ruling out the possible contribution from piezoelectric polarization and conduction band offset, we believe that the formation of 2DEG is due to the existence of large spontaneous polarization in AlInGaN layer, which experimentally verifies the feasible application of quaternary AlInGaN in the high-electron-mobility transistor.

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Near-ideal Schottky contact on quaternary AlInGaN epilayer lattice-matched with GaN

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