A 50 μm pitch Tape Automated Bonding (TAB) has been developed by applying newly developed TAB tape and inner lead bonding technology. A new electrodeposited Cu foil with high tensile strength and 18 μm thickness was adopted as the lead material. Sn plating on the inner leads has been thinned to 0.25 μm from the conventional 0.6 μm to avoid excess alloy formation. The inner leads were gang-bonded to the Au bumps. Results of the study of the metallurgy of the bonded region before and after high temperature storage are discussed.
|ジャーナル||Proceedings - Electronic Components and Technology Conference|
|出版ステータス||Published - 1995 1月 1|
|イベント||Proceedings of the 1995 45th Electronic Components & Technology Conference - Las Vegas, NV, USA|
継続期間: 1995 5月 21 → 1995 5月 24
ASJC Scopus subject areas